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L9965P Datasheet(PDF) 17 Page - STMicroelectronics |
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L9965P Datasheet(HTML) 17 Page - STMicroelectronics |
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17 / 104 page  Symbol Parameter Test condition Min Typ Max Unit Pin LERBST External output inductor ISAT >> IERBST_PEAK_LIM Application info -20% 33 +20% µH ERBST LERBST_DCR External inductor DCR Application info - 1.5 Ω ERBST VDFW External diode forward voltage Application info - 1.2 V ERBST VERBST_DIS ERBST disable threshold during power- up Voltage difference between VBATMON pin and ERBST pin 1.5 2.2 2.7 V VBATMON, ERBST tERBST_READY_FLT ERBST ready filter time Tested by SCAN 10 20 25 µs VBATMON, ERBST tERBST_STARTUP ERBST startup time From VERBST = 5.3 V to 90% of VERBST_110 CERBST = CERBSTmax VIN = 6 V - 220 ms ERBST TERBSTSW_SD Thermal shutdown threshold Guaranteed by design 150 - 190 °C ERBST TERBSTSW_SD_HYS Thermal shutdown threshold hysteresis Guaranteed by design 5 - 15 °C ERBST tERBST_SD_FLT Thermal shutdown filter time Guaranteed by design 7 8.5 10 µs ERBST IERBST_PEAK_LIM_0 ERBSTSW peak current limitation PIN_LIMIT = 0 330 - 480 mA ERBSTSW IERBST_PEAK_LIM_1 ERBSTSW peak current limitation PIN_LIMIT = 1 VIN = 6 V 300 - 440 mA ERBSTSW IERBST_OC ERBSTSW overcurrent threshold 460 - 700 mA ERBSTSW NERBST_OC_COUNT Number of counts before turn-off Overcurrent events - 5 - # ERBSTSW RDSON_ERBSTSW Boost switch ON resistance - - 1 Ω ERBSTSW VERBST_DLOSS_TH ERBST diode loss detection threshold Voltage difference between ERBSTSW pin and ERBST pin 2.3 3.3 4.0 V ERBST, ERBSTSW VERBSTSW_CLAMP ERBSTSW pin clamping voltage Diode loss 33 - 40 V ERBSTSW NERBST_DLOSS_COUNT Number of counts before turn-off Diode loss clamping events - 3 - # ERBSTSW tRISE_ERBSTSW ERBSTSW rise time From 10% to 90% of VERBSTSW_max Min IERDCHSW peak current Application info - - 15 ns ERBSTSW tFALL_ERBSTSW ERBSTSW fall time From 90% to 10% of VERBSTSW_max Max IERDCHSW peak current Application info - - 20 ns ERBSTSW L9965P Functional description DS14702 - Rev 4 page 17/104 |
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