5

INA818

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SBOS894A – APRIL 2019 – REVISED JUNE 2019

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Copyright © 2019, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

Short-circuit to VS / 2.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply voltage dual supply, VS = (V+) – (V–)

±20

V

Supply voltage single supply, VS = (V+) – (V–)

40, (single

supply)

V

Signal input pins

–60

60

V

VREF pin

–20

20

V

Signal output pins maximum voltage

(-Vs) - 0.5

(+Vs) + 0.5

V

Signal output pins maximum current

-50

50

mA

Output short-circuit(2)

Continuous

Operating Temperature, TA

–50

150

°C

Junction Temperature, TJ

175

Storage Temperature, Tstg

–65

150

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±1500

V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±750

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

Supply voltage VS

Single-supply

4.5

36

V

Dual-supply

±2.25

±18

Specified temperature

Specified temperature

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.4 Thermal Information

THERMAL METRIC(1)

INA818

UNIT

D (SOIC)

8 PINS

RθJA

Junction-to-ambient thermal resistance

119.6

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

66.3

°C/W

RθJB

Junction-to-board thermal resistance

61.9

°C/W

ψJT

Junction-to-top characterization parameter

20.5

°C/W

ψJB

Junction-to-board characterization parameter

61.4

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

°C/W