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TLV6710

SNVSAV4B – JANUARY 2018 – REVISED OCTOBER 2018

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Copyright © 2018, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltages are with respect to network ground terminal.

7 Specifications

7.1 Absolute Maximum Ratings

Over operating junction temperature range, unless otherwise noted.

(1)

MIN

MAX

UNIT

Voltage(2)

VDD

–0.3

+40

V

VOUTA, VOUTB

–0.3

+28

V

VINA, VINB

–0.3

+7

V

Current

Output pin current

40

mA

Temperature

Operating junction, TJ

–40

+125

°C

Storage temperature, Tstg

–65

+150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±500

7.3 Recommended Operating Conditions

over operating junction temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VDD

Supply pin voltage

1.8

36

V

VINA, VINB

Input pin voltage

0

1.7

V

VOUTA, VOUTB

Output pin voltage

0

25

V

IOUTA, IOUTB

Output pin current

0

10

mA

TJ

Junction temperature

–40

+25

+125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report (SPRA953).

7.4 Thermal Information

THERMAL METRIC(1)

TLV6710

UNITS

DDC (SOT)

6 PINS

RθJA

Junction-to-ambient thermal resistance

201.6

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

47.8

°C/W

RθJB

Junction-to-board thermal resistance

51.2

°C/W

ψJT

Junction-to-top characterization parameter

0.7

°C/W

ψJB

Junction-to-board characterization parameter

50.8

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

°C/W