5

TMP468

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SBOS762B – NOVEMBER 2016 – REVISED JUNE 2017

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Copyright © 2016–2017, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Power supply

V+

–0.3

6

V

Input voltage

THERM, THERM2, SDA, SCL, and ADD only

–0.3

6

V

D1+ through D8+

–0.3

((V+) + 0.3)

and

≤ 6

D– only

–0.3

0.3

Input current

SDA sink

–25

mA

All other pins

–10

10

Operating temperature

–55

150

°C

Junction temperature (TJ, maximum)

150

°C

Storage temperature, Tstg

–60

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V

Charged device model (CDM), JEDEC specification JESD22-C101(2)

±750

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

V+

Supply voltage

1.7

3.6

V

TA

Operating free-air temperature

–40

125

°C

TD

Remote junction temperature

–55

150

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1)

TMP468

UNIT

RGT (VQFN)

YFF (DSBGA)

16 PINS

16 PINS

RθJA

Junction-to-ambient thermal resistance

46

76

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

43

0.7

°C/W

RθJB

Junction-to-board thermal resistance

17

13

°C/W

ψJT

Junction-to-top characterization parameter

0.8

0.4

°C/W

ψJB

Junction-to-board characterization parameter

5

13

°C/W