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HUSB251 Datasheet(PDF) 8 Page - Hynetek Semiconductor Co., Ltd. |
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HUSB251 Datasheet(HTML) 8 Page - Hynetek Semiconductor Co., Ltd. |
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8 / 21 page ![]() HUSB251 Data Sheet ©2023 Hynetek Semiconductor Co., Ltd. All rights reserved. Page 8 of 21 Parameter Symbol Test Conditions/Comments Min Typ Max Unit D-/D+ TX Valid Output Low VTX_VOL 0.3 V D-/D+ RX Valid Input High VRX_VIH 1.4 3.6 V D-/D+ RX Valid Input Low VRX_VIL 1 V Unit Interval for FCP UI 160 μs BC1.2 Detection DCD Source Current IDP_SRC 7 10 12 μA BC1.2 Source Voltage VDPM_SRC 0.55 0.6 0.65 V BC1.2 Sink Current IDPM_SNK 25 75 125 μA Voltage Regulation VDAC LSB LSB_VDAC 10 Bit Default Voltage VDEFAULT 4.75 5.1 5.5 V Regulation Accuracy vSRCValid TA = 25°C 99 100 101 % TJ = -40°C to 125°C 97 100 103 % Active Load for Discharge RALD ALD option 0 is selected 70 mA ALD option 1 is selected 100 mA ALD option 2 is selected 140 mA ALD option 3 is selected 170 mA Current Control Constant Current Accuracy Operating current is less than 3 A -0.15 0 0.15 A Operating current is higher than 3 A, refer to nominal operation current 95 100 105 % Current Sensing Resistor RCS 5 mΩ Gate Driver and VBUS Gate Driver Output Voltage VGATE VIN ≤ 21 V 5 7 10 V VIN > 21 V 4.5 5.5 6.5 V Gate Driver Output Current IGATE_ON 20 μA Gate Discharge Current IGATE_DSG 20 mA VBUS Discharge Current IVBUS_DSG 20 mA Fault Protection Over-voltage Protection Threshold VIN_OV OVP threshold option 0, refer to nominal VIN 110 % OVP threshold option 1, refer to nominal VIN 115 % OVP threshold option 2, refer to nominal VIN 120 % OVP threshold option 3, refer to nominal VIN 125 % Over-current Protection Threshold IIN_OCP Nominal output current = 3 A 3.6 A Short-circuit Protection Threshold IIN_SCP 12 A OTP Current Source IOTP 80 μA Thermal Shut Down Threshold TSD 150 °C |
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