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SH7014 Datasheet(PDF) 569 Page - Renesas Technology Corp |
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SH7014 Datasheet(HTML) 569 Page - Renesas Technology Corp |
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569 / 754 page ![]() 18. 128 kB Flash Memory (F-ZTAT) Rev.5.00 Sep. 27, 2007 Page 535 of 716 REJ09B0398-0500 CE OE CE A16 to A0 OE WE I/O7 to I/O0 Note: Data is latched on the rising edge of WE. tceh twep tf tr tces tnxtc Address stable tds tdh Command write Memory read mode Figure 18.20 Timing Waveforms for Memory Read after Memory Write Table 18.14 AC Characteristics in Transition from Memory Read Mode to Another Mode Conditions: V CC = 5.0 V ±10%, VSS = 0 V, Ta = 25°C ±5°C Item Symbol Min Max Unit Notes Command write cycle t nxtc 20 μs CE hold time t ceh 0 ns CE setup time t ces 0 ns Data hold time t dh 50 ns Data setup time t ds 50 ns Write pulse width t wep 70 ns WE rise time t r 30 ns WE fall time t f 30 ns |
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