SH7014 datasheet(568/754 Pages) RENESAS

568 / 754 page

18. 128 kB Flash Memory (F-ZTAT)

Rev.5.00 Sep. 27, 2007 Page 534 of 716

REJ09B0398-0500

Table 18.12 Programmer Mode Commands

1st Cycle

2nd Cycle

Command Name

Number of

Cycles

Mode

Address

Data

Mode

Address

Data

Memory read mode

1 + n

Write

H'00

Read

Dout

Auto-program mode

129

Write

H'40

Write

Din

Auto-erase mode

Write

H'20

Write

H'20

Status read mode

Write

H'71

Write

H'71

Notes: 1. In auto-program mode. 129 cycles are required for command writing by a simultaneous

128-byte write.

2. In memory read mode, the number of cycles depends on the number of address write

cycles (n).

18.11.3

Memory Read Mode

1. After completion of auto-program/auto-erase/status read operations, a transition is made to the

command wait state. When reading memory contents, a transition to memory read mode must

first be made with a command write, after which the memory contents are read.

2. In memory read mode, command writes can be performed in the same way as in the command

wait state.

3. Once memory read mode has been entered, consecutive reads can be performed.

4. After powering on, memory read mode is entered.

Table 18.13 AC Characteristics in Transition to Memory Read Mode

Conditions:

CC = 5.0 V ±10%, VSS = 0 V, Ta = 25°C ±5°C

Item

Symbol

Min

Max

Unit

Notes

Command write cycle

nxtc

μs

CE hold time

ceh

CE setup time

ces

Data hold time

Data setup time

Write pulse width

wep

WE rise time

WE fall time

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