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SH7014 Datasheet(PDF) 579 Page - Renesas Technology Corp |
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SH7014 Datasheet(HTML) 579 Page - Renesas Technology Corp |
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579 / 754 page ![]() 18. 128 kB Flash Memory (F-ZTAT) Rev.5.00 Sep. 27, 2007 Page 545 of 716 REJ09B0398-0500 18.11.9 Notes on Memory Programming 1. When programming addresses which have previously been programmed, carry out auto- erasing before auto-programming. 2. When performing programming using PROM mode on a chip that has been programmed/erased in an on-board programming mode, auto-erasing is recommended before carrying out auto-programming. Notes: 1. The flash memory is initially in the erased state when the device is shipped by Renesas Technology. For other chips for which the erasure history is unknown, it is recommended that auto-erasing be executed to check and supplement the initialization (erase) level. 2. Auto-programming should be performed once only on the same address block. Additional programming cannot be performed on previously programmed address blocks. |
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