HAL810 datasheet(6/30 Pages) MICRONAS

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HAL810

DATA SHEET

Feb. 6, 2009; DSH000034_003EN

Micronas

2. Functional Description

2.1. General Function

The HAL810 is a monolithic integrated circuit which

provides

pulse-width

modulated

output

signal

(PWM). The duty cycle of the PWM signal is propor-

tional to the magnetic flux through the Hall plate.

The external magnetic field component perpendicular

to the branded side of the package generates a Hall

voltage. The Hall IC is sensitive to magnetic north and

south polarity. This voltage is converted to a digital

value, processed in the Digital Signal Processing Unit

(DSP) according to the settings of the EEPROM regis-

ters, converted to a pulse-width modulated output sig-

nal, and stabilized by a push-pull output transistor

stage. The function and the parameters for the DSP

are explained in Section 2.2. on page 8.

The setting of the LOCK register disables the program-

ming of the EEPROM memory for all time. This regis-

ter cannot be reset.

As long as the LOCK register is not set, the output

characteristics can be adjusted by programming the

EEPROM registers. The IC is addressed by modulat-

ing the supply voltage (see Fig. 2–1). In the supply

voltage range from 4.5 V to 5.5 V, the sensor gener-

ates a PWM output signal. After detecting a command,

the sensor reads or writes the memory and answers

with a digital signal on the output pin. The PWM output

is switched off during the communication.

The open-circuit detection provides a defined output

voltage if the VDD or GND line is broken. Internal tem-

perature compensation circuitry and the choppered off-

set compensation enables operation over the full tem-

perature range with minimal changes in accuracy and

high offset stability. The circuitry also rejects offset

shifts due to mechanical stress from the package. The

non-volatile memory consists of redundant EEPROM

cells. In addition, the sensor IC is equipped with

devices for overvoltage and reverse-voltage protection

at all pins.

Fig. 2–1: Programming with VDD modulation

Fig. 2–2: HAL810 block diagram

HAL

810

VDD

GND

OUT

PWM

VDD

digital protocol

Internally

Temperature

Oscillator

Switched

100

Digital

Output

OPA

OUT

VDD

GND

Supply

EEPROM Memory

Lock Control

Digital

Stabilized

Supply and

Protection

Devices

Dependent

Bias

Protection

Devices

Hall Plate

Signal

Processing

Conditioning

Level

Detection

Output

A/D

Converter

10 k

Open-Circuit

Detection

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