HAL810 datasheet(19/30 Pages) MICRONAS

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DATA SHEET

HAL810

Micronas

Feb. 6, 2009; DSH000034_003EN

3.6. Characteristics

at TJ = −40 °C to +170 °C, VDD = 4.5 V to 5.5 V, GND = 0 V after programming and locking of the device,

at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.

Typical Characteristics for TJ = 25 °C and VDD = 5 V.

Symbol

Parameter

Pin No.

Min.

Typ.

Max.

Unit

Conditions

IDD

Supply Current

over Temperature Range

−

710

VDDZ

Overvoltage Protection

at Supply

−

17.5

IDD =25 mA, TJ =25°C, t= 20 ms

VOZ

Overvoltage Protection

at Output

−

19.5

IO =10 mA, TJ =25°C, t = 20 ms

Output Duty Cycle

Resolution

−−

bit

INL

Non-Linearity of Output Duty

Cycle over Temperature

−0.5

0.5

ΔT

Variation of Linear

Temperature Coefficient

−400 0

400

ppm/k

if TC and TCSQ suitable for the

application

ΔDC

MIN-DUTY

Accuracy of Minimum Duty

Cycle over Temperature

Range

−1

01%

ΔDC

MAX-

DUTY

Accuracy of Maximum Duty

Cycle over Temperature

Range

−1

01%

VOUTH

Output High Voltage

−

4.8

−

VDD =5 V, −1mA ≤ IOUT ≤1 mA

VOUTL

Output Low Voltage

−

0.2

−

VDD =5 V, −1mA ≤ IOUT ≤ 1mA

fPWM

PWM Output Frequency

over Temperature Range

−

105

125

145

fADC

Internal ADC Frequency

over Temperature Range

−

110

128

150

kHz

tPOD

Power-Up Time (Time to

reach valid duty cycle)

−−

−

ROUT

Output Resistance over

Recommended Operating

Range

−

110

VOUTLmax ≤ VOUT ≤ VOUTHmin

TO92UT Package

Rthja

Rthjc

Thermal Resistance

Junction to Ambient

Junction to Case

−

235

measured on an 1s0p board

1) if the Hall IC is programmed accordingly

2) if more than 50% of the selected magnetic field range are used

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