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LT3757 Datasheet(PDF) 20 Page - Linear Technology |
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LT3757 Datasheet(HTML) 20 Page - Linear Technology |
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20 / 36 page ![]() LT3757 0 3757fb applicaTions inForMaTion whereVSNisthesnubbercapacitorvoltage.Asmaller VSNresultsinalargersnubberloss.AreasonableVSNis 2to2.5timesof: V N N OUT P S • LLK is the leakage inductance of the primary winding, whichisusuallyspecifiedinthetransformercharacter- istics. LLK can be obtained by measuring the primary inductance with the secondary windings shorted. The snubbercapacitorvalue(CCN)canbedeterminedusing thefollowingequation: C V V R f CN SN SN CN = ∆ • • where∆VSNisthevoltagerippleacrossCCN.Areasonable ∆VSNis5%to10%ofVSN.Thereversevoltageratingof DSNshouldbehigherthanthesumofVSNandVIN(MAX). Flyback Converter: Sense Resistor Selection Inaflybackconverter,whenthepowerswitchisturned on, the current flowing through the sense resistor (ISENSE)is: ISENSE=ILP SetthesensevoltageatILP(PEAK)tobetheminimumof theSENSEcurrentlimitthresholdwitha20%margin.The senseresistorvaluecanthenbecalculatedtobe: R mV I SENSE LP PEAK = 80 ( ) Flyback Converter: Power MOSFET Selection Fortheflybackconfiguration,theMOSFETisselectedwith aVDCratinghighenoughtohandlethemaximumVIN,the reflectedsecondaryvoltageandthevoltagespikedueto theleakageinductance.ApproximatetherequiredMOSFET VDCratingusing: BVDSS>VDS(PEAK) where: V V V DS PEAK IN MAX SN ( ) ( ) = + ThepowerdissipatedbytheMOSFETinaflybackcon- verteris: PFET=I2M(RMS)•RDS(ON)+2•V2DS(PEAK)•IL(MAX)• CRSS•f/1A Thefirstterminthisequationrepresentstheconduction lossesinthedevice,andthesecondterm,theswitching loss.CRSSisthereversetransfercapacitance,whichis usuallyspecifiedintheMOSFETcharacteristics. FromaknownpowerdissipatedinthepowerMOSFET,its junctiontemperaturecanbeobtainedusingthefollowing equation: TJ=TA+PFET•θJA=TA+PFET•(θJC+θCA) TJ must not exceed the MOSFET maximum junction temperaturerating.Itisrecommendedtomeasurethe MOSFETtemperatureinsteadystatetoensurethatabsolute maximumratingsarenotexceeded. |
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