INA826 datasheet(4/40 Pages) TI

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INA826

SBOS562B

– AUGUST 2011 – REVISED DECEMBER 2011

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ELECTRICAL CHARACTERISTICS (continued)

At TA = +25°C, VS = ±15 V, RL = 10 kΩ, VREF = 0 V, and G = 1, unless otherwise noted.

INA826

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

GAIN

Gain equation

V/V

Range of gain

1000

V/V

G = 1, VO = ±10 V

±0.003

±0.015

G = 10, VO = ±10 V

±0.03

±0.15

Gain error

G = 100, VO = ±10 V

±0.04

±0.15

G = 1000, VO = ±10 V

±0.04

±0.15

G = 1, TA = –40°C to +125°C

±0.1

±1

ppm/

°C

Gain vs temperature(4)

> 1, TA = –40°C to +125°C

±10

±35

ppm/

°C

G = 1 to 100, VO = –10 V to +10 V

ppm

Gain nonlinearity

G = 1000, VO = –10 V to +10 V

ppm

OUTPUT

Voltage swing

RL = 10 kΩ

–) + 0.1

(V+)

– 0.15

Load capacitance stability

1000

Open loop output impedance

See Figure 56

Short-circuit current

Continuous to VS/2

±16

FREQUENCY RESPONSE

G = 1

MHz

G = 10

500

kHz

Bandwidth,

–3 dB

G = 100

kHz

G = 1000

kHz

G = 1, VO = ±14.5 V

µs

Slew rate

G = 100, VO = ±14.5 V

µs

G = 1, VSTEP = 10 V

µs

G = 10, VSTEP = 10 V

µs

Settling time to 0.01%

G = 100, VSTEP = 10 V

µs

G = 1000, VSTEP = 10 V

224

µs

G = 1, VSTEP = 10 V

µs

G = 10, VSTEP = 10 V

µs

Settling time to 0.001%

G = 100, VSTEP = 10 V

µs

G = 1000, VSTEP = 10 V

278

µs

(4)

The values specified for G

> 1 do not include the effects of the external gain-setting resistor, RG.

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