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S29CD032J Datasheet(PDF) 71 Page - SPANSION |
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S29CD032J Datasheet(HTML) 71 Page - SPANSION |
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71 / 81 page ![]() October 11, 2012 S29CD-J_CL-J_00_B7 S29CD-J and S29CL-J Flash Family 71 Data She e t 18.8 Erase and Programming Performance Notes 1. Typical program and erase times assume the following conditions: 25°C, 2.5V VCC, 100K cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 145°C, VCC = 2.5V, 1M cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 20.1 and Table 20.2 for further information on command definitions. 6. PPBs have a program/erase cycle endurance of 100 cycles. 7. Guaranteed cycles per sector is 100K minimum. 18.9 PQFP and Fortified BGA Pin Capacitance Notes 1. Sampled, not 100% tested. 2. Test conditions TA = 25°C, f = 1.0 MHz. Table 18.7 Erase and Programming Performance Parameter Typ (Note 1) Max (Note 2) Unit Comments Sector Erase Time 0.5 5 s Excludes 00h programming prior to erasure (Note 4) Chip Erase Time 16 Mb = 23 32 Mb = 46 16 Mb = 230 32 Mb = 460 s Double Word Program Time 8 130 µs Excludes system level overhead (Note 5) Accelerated Double Word Program Time 8 130 µs Accelerated Chip Program Time 16 Mb = 5 32 Mb = 10 16 Mb = 50 32 Mb = 100 s Chip Program Time, x32 (Note 3) 16 Mb = 12 32 Mb = 24 16 Mb = 120 32 Mb = 240 s Table 18.8 PQFP and Fortified BGA Pin Capacitance Parameter Symbol Parameter Description Test Setup Typ Max Unit CIN Input Capacitance VIN = 0 6 7.5 pF COUT Output Capacitance VOUT = 0 8.5 12 pF CIN2 Control Pin Capacitance VIN = 0 7.5 9 pF |
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