S29CD032J datasheet(80/81 Pages) SPANSION

80 / 81 page

S29CD-J and S29CL-J Flash Family

S29CD-J_CL-J_00_B7 October 11, 2012

Da ta

Sh e e t

VCC and VIO Power-up And Power-

down Sequencing

Added reference to timing section.

Standby Mode

Changed Vcc ± 0.2V to Vcc ± 10%.

Figure: Test Setup

Removed Note “Diodes are IN3064 or equivalent”.

Table: Alternate CE# Controlled Erase/

Program Operations

Corrected values for tDH with separate values for 16 Mb and 32 Mb.

Table: Memory Array Command

Definitions (x32 Mode)

Cleaned up Notes.

Revision B4 (October 30, 2009)

Absolute Maximum Ratings

Corrected Address, Data, Control Signals identifiers to correctly distinguish different ratings

between CL016L, CL032J, CD016J, and CD032J.

DC Characteristics

Added line item to distinguish VIHCLK value differences between CL-J and CD-J.

Synchronous Operation

Corrected Figure “Burst Mode Read (x32 Mode)” to reflect max linear burst length of 8 double words

instead of 32.

Hardware Reset (RESET#)

Corrected Table “Burst Initial Access Delay”: changed tREADY2, tRP, and tREADY3 set up to Min

instead of Max.

Corrected Figure “RESET# Timings” to add tREADY2 to timing diagram for bank not executing

embedded algorithm.

Revision B5 (May 25, 2011)

Physical Dimensions/Connection

Diagrams

On the 80-ball Fortified BGA Connection Diagram, corrected the K1 pin name from VCCQ to VIO.

Revision B6 (March 15, 2012)

Global

Added LAD080 Fortified BGA package option and drawing.

Additional Resources

Updated relevant application note links.

Revision History

Corrected heading for May 25, 2011 edits from revision B4 to B5.

Revision B7 (October 11, 2012)

Valid Combinations

Updated Valid Combinations table to add clarity and make explicit which offerings require a

customer to “contact factory for availability”.

Asynchronous Operations

In Figure 18.3, “Asynchronous Command Write Timing”, corrected the tWC measurement to be of

the Stable Address period, not the Valid Data period.

Erase/Program Operations

In Table 18.5, “Erase/Program Operations”, corrected JEDEC symbol tAVAV to tAVAX.

In Table 18.5, merged redundant rows tGHWL and tWEH.

In Figures 18.8 “Program Operation Timings” and 18.9 “Chip/Sector Erase Operation Timings”,

corrected tAH measurement to be from the falling edge of WE#.

Section

Description

S29CD032J Datasheet(PDF) 80 Page - SPANSION

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