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OPA2832 Datasheet(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part # OPA2832
Description  Dual, Low-Power, High-Speed, Fixed-Gain Operational Amplifier
PDF  37 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

OPA2832 Datasheet(HTML) 2 Page - National Semiconductor (TI)

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ABSOLUTE MAXIMUM RATINGS
(1)
Top View
SO, MSOP
+V
S
Output
2
−Input
2
+Input
2
Output
1
−Input
1
+Input
1
−V
S
1
2
3
4
8
7
6
5
400
Ω
400
Ω
400
Ω
400
Ω
OPA2832
SBOS327C – FEBRUARY 2005 – REVISED AUGUST 2008 ............................................................................................................................................. www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION(1)
SPECIFIED
PACKAGE
TEMPERATURE
PACKAGE
ORDERING
TRANSPORT
PRODUCT
PACKAGE-LEAD
DESIGNATOR
RANGE
MARKING
NUMBER
MEDIA, QUANTITY
OPA2832ID
Rails, 100
OPA2832
SO-8 Surface-Mount
D
–40°C to +85°C
OPA2832
OPA2832IDR
Tape and Reel, 2500
OPA2832IDGK
Tape and Reel, 250
OPA2832
MSOP-8
DGK
–40°C to +85°C
A61
OPA2832IDGKR
Tape and Reel, 2500
(1)
For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
Power Supply
11VDC
Internal Power Dissipation
See Thermal Characteristics
Differential Input Voltage(2)
±1.2V
Input Voltage Range
–0.5V to ±VS + 0.3V
Storage Voltage Range: D, DGK
–65°C to +125°C
Lead Temperature (soldering, 10s)
+300°C
Junction Temperature (TJ)
+150°C
ESD Rating:
Human Body Model (HBM)
2000V
Charge Device Model (CDM)
1000V
Machine Model (MM)
200V
(1)
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not supported.
(2)
Noninverting input to internal inverting mode.
2
Submit Documentation Feedback
Copyright © 2005–2008, Texas Instruments Incorporated
Product Folder Link(s): OPA2832



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