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OPA2832 Datasheet(PDF) 5 Page - National Semiconductor (TI) |
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OPA2832 Datasheet(HTML) 5 Page - National Semiconductor (TI) |
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5 / 37 page  ELECTRICAL CHARACTERISTICS: VS = +5V OPA2832 www.ti.com ............................................................................................................................................. SBOS327C – FEBRUARY 2005 – REVISED AUGUST 2008 Boldface limits are tested at +25°C. At TA = +25°C, G = +2V/V, and RL = 150Ω to VCM = 2V, unless otherwise noted (see Figure 61). OPA2832ID, IDGK 0°C to –40°C to MIN/ TEST PARAMETER CONDITIONS +25°C +25°C(1) +70°C(2) +85°C(2) UNITS MAX LEVEL(3) AC PERFORMANCE (see Figure 61) Small-Signal Bandwidth G = +1, VO ≤ 0.5VPP 210 MHz typ C G = +2, VO ≤ 0.5VPP 75 56 55 55 MHz min B G = –1, VO ≤ 0.5VPP 95 60 58 58 MHz min B Peaking at a Gain of +1 VO ≤ 0.5VPP 7 dB typ C Slew Rate G = +2, 2V Step 320 230 220 220 V/ µs min B Rise Time 0.5V Step 4.8 5.8 5.8 5.9 ns max B Fall Time 0.5V Step 4.8 5.8 5.8 5.9 ns max B Settling Time to 0.1% G = +2, 1V Step 46 64 66 67 ns max B Harmonic Distortion VO = 2VPP, 5MHz 2nd-Harmonic RL = 150Ω –59 –56 –54 –53 dBc max B RL = 500Ω –62 –59 –57 –57 dBc max B 3rd-Harmonic RL = 150Ω –56 –50 –49 –47 dBc max B RL = 500Ω –72 –65 –62 –58 dBc max B Input Voltage Noise f > 1MHz 9.3 nV/ √Hz typ C Input Current Noise f > 1MHz 2.3 pA/ √Hz typ C NTSC Differential Gain RL = 150Ω 0.11 % typ C NTSC Differential Phase RL = 150Ω 0.14 ° typ C DC PERFORMANCE(4) Gain Error G = +2 ±0.3 ±1.5 ±1.6 ±1.7 % min A G = –1 ±0.2 ±1.5 ±1.6 ±1.7 % max B Internal RF and RG, Maximum 400 455 460 462 Ω max A Minimum 400 345 340 338 Ω max A Average Drift ±0.1 ±0.1 %/°C max B Input Offset Voltage ±1.5 ±6 ±7 ±7.5 mV max A Average Offset Voltage Drift — ±20 ±20 µV/°C max B Input Bias Current VCM = 2.0V +5.5 +10 +12 +13 µA max A Input Bias Current Drift — ±45 ±45 nA/°C max B Input Offset Current VCM = 2.0V ±0.1 ±1.5 ±2 ±2.5 µA max A Input Offset Current Drift — ±10 ±10 nA/°C max B INPUT Least Positive Input Voltage –0.5 –0.2 0 +0.1 V max B Most Positive Input Voltage 3.3 3.2 3.1 3.0 V min B Input Impedance, Differential Mode 10 || 2.1 k Ω || pF typ C Common-Mode 400 || 1.2 k Ω || pF typ C OUTPUT Least Positive Output Voltage RL = 1kΩ to 2.0V 0.03 0.16 0.18 0.20 V max A RL = 150Ω to 2.0V 0.18 0.3 0.35 0.40 V max A Most Positive Output Voltage RL = 1kΩ to 2.0V 4.94 4.8 4.6 4.4 V min A RL = 150Ω to 2.0V 4.86 4.6 4.5 4.4 V min A Current Output, Sinking and Sourcing ±75 ±58 ±53 ±50 mA min A Short-Circuit Output Current Output Shorted to Either Supply 100 mA typ C Closed-Loop Output Impedance G = +2, f ≤ 100kHz 0.2 Ω typ C (1) Junction temperature = ambient for +25°C specifications. (2) Junction temperature = ambient at low temperature limits; junction temperature = ambient +5°C at high temperature limit for over temperature specifications. (3) Test levels: (A) 100% tested at +25°C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information. (4) Current is considered positive out of node. Copyright © 2005–2008, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Link(s): OPA2832 |
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