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OPA2832 Datasheet(PDF) 7 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part # OPA2832
Description  Dual, Low-Power, High-Speed, Fixed-Gain Operational Amplifier
PDF  37 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

OPA2832 Datasheet(HTML) 7 Page - National Semiconductor (TI)

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ELECTRICAL CHARACTERISTICS: VS = +3.3V
OPA2832
www.ti.com ............................................................................................................................................. SBOS327C – FEBRUARY 2005 – REVISED AUGUST 2008
Boldface limits are tested at +25°C.
At TA = +25°C, G = +2V/V, and RL = 150Ω to VCM = 0.75V, unless otherwise noted (see Figure 62).
OPA2832ID, IDGK
0°C to
MIN/
TEST
PARAMETER
CONDITIONS
+25°C
+25°C(1)
+70°C(2)
UNITS
MAX
LEVEL(3)
AC PERFORMANCE (see Figure 62)
Small-Signal Bandwidth
G = +1, VO ≤ 0.5VPP
180
MHz
typ
C
G = +2, VO ≤ 0.5VPP
85
59
57
MHz
min
B
G = –1, VO ≤ 0.5VPP
100
63
61
MHz
min
B
Peaking at a Gain of +1
VO ≤ 0.5VPP
8
dB
typ
C
Slew Rate
1V Step
130
110
100
V/
µs
min
B
Rise Time
0.5V Step
4.6
5.6
5.7
ns
max
B
Fall Time
0.5V Step
4.6
5.6
5.7
ns
max
B
Settling Time to 0.1%
1V Step
48
70
80
ns
max
B
Harmonic Distortion
5MHz
2nd-Harmonic
RL = 150Ω
–71
–64
–61
dBc
max
B
RL = 500Ω
–74
–70
–64
dBc
max
B
3rd-Harmonic
RL = 150Ω
–66
–60
–55
dBc
max
B
RL = 500Ω
–69
–66
–62
dBc
max
B
Input Voltage Noise
f > 1MHz
9.4
nV/
√Hz
typ
C
Input Current Noise
f > 1MHz
2.4
pA/
√Hz
typ
C
DC PERFORMANCE(4)
Gain Error
G = +2
±0.3
±1.5
±1.6
%
min
A
G = –1
±0.2
±1.5
±1.6
%
max
B
Internal RF and RG
Maximum
400
455
460
Ω
max
A
Minimum
400
345
340
Ω
max
A
Average Drift
±0.1
%/°C
max
B
Input Offset Voltage
±1.4
±7.5
±8.7
mV
max
A
Average Offset Voltage Drift
—
±27
µV/°C
max
B
Input Bias Current
VCM = 0.75V
+5.5
+10
+12
µA
max
A
Input Bias Current Drift
—
±45
nA/°C
max
B
Input Offset Current
VCM = 0.75V
±0.1
±1.5
±2
µA
max
A
Input Offset Current Drift
—
±10
nA/°C
max
B
INPUT
Least Positive Input Voltage
–0.5
–0.3
–0.2
V
max
B
Most Positive Input Voltage
1.5
1.4
1.3
V
min
B
Input Impedance
Differential Mode
10 || 2.1
k
Ω || pF
typ
C
Common-Mode
400 || 1.2
k
Ω || pF
typ
C
OUTPUT
Least Positive Output Voltage
RL = 1kΩ to 0.75V
0.03
0.16
0.18
V
max
B
RL = 150Ω to 0.75V
0.1
0.3
0.35
V
max
B
Most Positive Output Voltage
RL = 1kΩ to 0.75V
3
2.8
2.6
V
min
B
RL = 150Ω to 0.75V
3
2.8
2.6
V
min
B
Current Output, Sinking and Sourcing
±35
±25
±20
mA
min
A
Short-Circuit Output Current
Output Shorted to Either Supply
80
mA
typ
C
Closed-Loop Output Impedance
See Figure 2, f < 100kHz
0.2
Ω
typ
C
(1)
Junction temperature = ambient for +25°C specifications.
(2)
Junction temperature = ambient at low temperature limits; junction temperature = ambient +5°C at high temperature limit for over
temperature specifications.
(3)
Test levels: (A) 100% tested at +25°C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and
simulation. (C) Typical value only for information.
(4)
Current is considered positive out of node.
Copyright © 2005–2008, Texas Instruments Incorporated
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Product Folder Link(s): OPA2832



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