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OPA2832 Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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OPA2832 Datasheet(HTML) 3 Page - National Semiconductor (TI) |
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3 / 37 page  ELECTRICAL CHARACTERISTICS: VS = ±5V OPA2832 www.ti.com ............................................................................................................................................. SBOS327C – FEBRUARY 2005 – REVISED AUGUST 2008 Boldface limits are tested at +25C. At TA = +25°C, G = +2V/V, and RL = 150Ω to GND, unless otherwise noted (see Figure 63). OPA2832ID, IDGK 0°C to –40°C to MIN/ TEST PARAMETER CONDITIONS +25°C +25°C(1) +70°C(2) +85°C(2) UNITS MAX LEVEL(3) AC PERFORMANCE (see Figure 63) Small-Signal Bandwidth G = +1, VO ≤ 0.5VPP 250 MHz typ V G = +2, VO ≤ 0.5VPP 70 55 54 54 MHz min B G = –1, VO ≤ 0.5VPP 85 57 56 55 MHz min B Peaking at a Gain of +1 VO ≤ 0.5VPP 6 dB typ C Slew Rate G = +2, 2V Step 300 220 210 200 V/ µs min B Rise Time 0.5V Step 5.6 5.8 6.0 6.0 ns max B Fall Time 0.5V Step 5.6 5.8 6.0 6.0 ns max B Settling Time to 0.1% G = +2, 1V Step 45 63 65 66 ns max B Harmonic Distortion VO = 2VPP, 5MHz 2nd-Harmonic RL = 150Ω –64 –60 –58 –58 dBc max B RL = 500Ω –66 –63 –61 –61 dBc max B 3rd-Harmonic RL = 150Ω –57 –50 –49 –48 dBc max B RL = 500Ω –73 –64 –60 –57 dBc max B Input Voltage Noise f > 1MHz 9.2 nV/ √Hz typ C Input Current Noise f > 1MHz 2.2 pA/ √Hz typ C NTSC Differential Gain RL = 150Ω 0.10 % typ C NTSC Differential Phase RL = 150Ω 0.16 ° typ C DC PERFORMANCE(4) Gain Error G = +2 ±0.3 ±1.5 ±1.6 ±1.7 % min A G = –1 ±0.2 ±1.5 ±1.6 ±1.7 % max B Internal RF and RG Maximum 400 455 460 462 Ω max A Minimum 400 345 340 338 Ω max A Average Drift ±0.1 ±0.1 %/°C max B Input Offset Voltage ±1.4 ±7.5 ±8.7 ±9.3 mV max A Average Offset Voltage Drift — ±27 ±27 µV/°C max B Input Bias Current +5.5 +10 +12 +13 µA max A Input Bias Current Drift — ±45 ±45 nA/°C max B Input Offset Current ±0.1 ±1.5 ±2 ±2.5 µA max A Input Offset Current Drift — ±10 ±10 nA/°C max B INPUT Negative Input Voltage Range –5.4 –5.2 –5.0 –4.9 V max B Positive Input Voltage Range 3.2 3.1 3.0 2.9 V min B Input Impedance Differential Mode 10 || 2.1 k Ω || pF typ C Common-Mode 400 || 1.2 k Ω || pF typ C OUTPUT Output Voltage Swing RL = 1kΩ to GND ±4.9 ±4.8 ±4.75 ±4.75 V max A RL = 150Ω to GND ±4.6 ±4.5 ±4.45 ±4.4 V max A Current Output, Sinking and Sourcing ±82 ±63 ±58 ±53 mA min A Short-Circuit Current Output Shorted to Either Supply 120 mA typ C Closed-Loop Output Impedance G = +2, f ≤ 100kHz 0.2 Ω typ C (1) Junction temperature = ambient for +25°C specifications. (2) Junction temperature = ambient at low temperature limits; junction temperature = ambient +5°C at high temperature limit for over temperature specifications. (3) Test levels: (A) 100% tested at +25°C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information. (4) Current is considered positive out of node. Copyright © 2005–2008, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Link(s): OPA2832 |
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