TGF2953_15 datasheet(14/21 Pages) TRIQUINT

Part #	TGF2953

Description	12 Watt Discrete Power GaN on SiC HEMT

PDF	21 Pages

Scroll/Zoom	100%

Manufacturer	TRIQUINT [TriQuint Semiconductor]

Direct Link	http://www.triquint.com

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14 / 21 page

TGF2953

12 Watt Discrete Power GaN on SiC HEMT

Datasheet: Rev A 10-22-14

- 14 of 21 -

Disclaimer: Subject to change without notice

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Model Load Pull Contours

Vds = 32V, Idq = 50mA, Simulated signal: 10% pulses. Bond wires not included. See page 19 for reference planes.

3dB compression performance referenced to maximum large-signal gain.

10GHz, Load-pull

41.1

40.9

40.7

10.5

9.96

9.46

55.8

50.8

45.8

•

Max Power is 41.2dBm

at Z = 8.924+12.857iΩ

Ω

= 0.0708+0.5211i

•

Max Gain is 11.1dB

at Z = 5.448+18.933iΩ

Ω

= 0.2608+0.7196i

•

Max PAE is 56%

at Z = 7.266+13.961iΩ

Ω

= 0.0799+0.604i

Zo = 14Ω

Ω

Zs(fo) = 0.9Ω

Ω

Zs(2fo) = 6.1Ω

Ω

Zs(3fo) = 6.1Ω

Ω

Zl(2fo) = 14Ω

Ω

Zl(3fo) = 14Ω

Ω

Power

Gain

PAE

TGF2953 Datasheet(PDF) 14 Page - TriQuint Semiconductor

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