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AN2738 Datasheet(PDF) 29 Page - STMicroelectronics

Part # AN2738
Description  L6390 half-bridge gate driver
PDF  54 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN2738 Datasheet(HTML) 29 Page - STMicroelectronics

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AN2738
Application example
Doc ID 14589 Rev 2
29/54
The formula above shows how the source current coming from the gate driver can directly
control the dVOUT/dt of the power half-bridge. This calculation is just a first approximation,
since typically the CGC Miller capacitance value is not constant but depends on the VCE
voltage, CGC is not linear. The main result of the abrupt variation of the CGC is that the
actual slope of the OUT transition is composed of two different dVOUT/dt slopes, one faster
and the other slower compared to the value obtained by the above formula (see Figure 26).
In this document only the first approximation approach will be used.
Figure 26.
Turn-on hard switching details with induction load: gate charge and
plateau phase
Due to CGC non-linearity, the IGBT (or MOSFET) datasheet also reports the equivalent total
amount of charge required during the different gate charge phases: the total gate charge Qg
required for turning on the IGBT (or MOSFET) completely, the QGE required for increasing
Ic = 0
OFF
Ton
Tfall
T1
T2
T3
T4
Vth
Vgs_p
Vge_max
Vge
Cge
Isource
Ic
Cge
Isource
Vce
=
HVbus
Vge = Vge_p
Cge
Isource
Ic
=
Iload
Vce
Cgc
dVce
dt
Cgc = Isource
Cge
Isource
Vce = Vce_sat
Vge
Vge
Vce
=
HVbus
Ic
=
Iload
T1
T2
T3
T4
PLATEAU
PHASE
plateau
t
t, Q
HVbus
Iload
Vge
Vce, Ic
Ic
Vce
T2
T3
T4
GATE CHARGE CURVES
Qge
Qgc
Qg
plateau
Vge
Vge = Vge_p
Iload
Vce_sat
HVbus
APPROX.
REAL
Tfall
Ton
OFF
OFF
OFF
diode OFF
diode ON
diode ON
diode OFF
Ic vs Vce CHARACTERISTICS
Vge = Vge_max
WORKING
CURVE



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