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AN3338 Datasheet(PDF) 17 Page - STMicroelectronics |
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AN3338 Datasheet(HTML) 17 Page - STMicroelectronics |
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17 / 72 page ![]() Doc ID 18441 Rev 4 17/72 AN3338 Electrical characteristics and functions 72 2 Electrical characteristics and functions In this section the main electrical characteristics of the power stage are discussed, together with a detailed description of all the SLLIMM functions. 2.1 IGBTs The SLLIMM achieves power savings in the inverter stage thanks to the use of IGBTs manufactured with the proprietary advanced PowerMESH™ process. These power devices, optimized for the typical motor control switching frequency, offer an excellent trade-off between voltage drop (VCE(sat)) and switching speed (tfall), and therefore minimize the two major sources of energy loss, conduction and switching, reducing the environmental impact of daily-use equipment. A full analysis on the power losses of the complete system is reported in Section 4: Power losses and dissipation. This IGBT family is capable of surviving short-circuits lasting up to 5 microseconds, as expected by targeted applications. 2.2 Freewheeling diodes The Turbo 2 ultrafast high voltage diodes have been adequately selected for the SLLIMM family and carefully tuned to achieve the best trr/VF trade-off and softness as freewheeling diodes in order to further improve the total performance of the inverter and significantly reduce the electromagnetic interference (EMI) in motor control applications which are quite sensitive to this phenomena. 2.3 High voltage gate drivers The SLLIMM is equipped with a versatile high voltage gate driver IC (HVIC), designed using BCD offline (Bipolar, CMOS, and DMOS) technology (see Figure 9) and particularly suited to field oriented control (FOC) motor driving applications, able to provide all the functions and current capability necessary for high side and low side IGBT driving. This driver can be used in all applications where high voltage shifted control is necessary and it includes a patented internal circuitry which replaces the external bootstrap diode. Each high voltage gate driver chip controls two IGBTs in half bridge topology, offering the basic functions such as dead time, interlocking, integrated bootstrap diode, and also the advanced features such as smart shutdown (patented), fault comparator, and a dedicated high performance op amp for advanced current sensing. A schematic summary of the features by device are listed in Table 1. In this application note the main characteristics of a high voltage gate drive related to the SLLIMM are discussed. For a greater understanding, please refer to the AN2738 application note. |
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