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AN3338 Datasheet(PDF) 17 Page - STMicroelectronics

Part # AN3338
Description  In recent years the variable speed motor control market has required high performance
PDF  72 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN3338 Datasheet(HTML) 17 Page - STMicroelectronics

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Doc ID 18441 Rev 4
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AN3338
Electrical characteristics and functions
72
2
Electrical characteristics and functions
In this section the main electrical characteristics of the power stage are discussed, together
with a detailed description of all the SLLIMM functions.
2.1
IGBTs
The SLLIMM achieves power savings in the inverter stage thanks to the use of IGBTs
manufactured with the proprietary advanced PowerMESH™ process.
These power devices, optimized for the typical motor control switching frequency, offer an
excellent trade-off between voltage drop (VCE(sat)) and switching speed (tfall), and therefore
minimize the two major sources of energy loss, conduction and switching, reducing the
environmental impact of daily-use equipment. A full analysis on the power losses of the
complete system is reported in
Section 4: Power losses and dissipation.
This IGBT family is capable of surviving short-circuits lasting up to 5 microseconds, as
expected by targeted applications.
2.2
Freewheeling diodes
The Turbo 2 ultrafast high voltage diodes have been adequately selected for the SLLIMM
family and carefully tuned to achieve the best trr/VF trade-off and softness as freewheeling
diodes in order to further improve the total performance of the inverter and significantly
reduce the electromagnetic interference (EMI) in motor control applications which are quite
sensitive to this phenomena.
2.3
High voltage gate drivers
The SLLIMM is equipped with a versatile high voltage gate driver IC (HVIC), designed using
BCD offline (Bipolar, CMOS, and DMOS) technology (see
Figure 9) and particularly suited
to field oriented control (FOC) motor driving applications, able to provide all the functions
and current capability necessary for high side and low side IGBT driving. This driver can be
used in all applications where high voltage shifted control is necessary and it includes a
patented internal circuitry which replaces the external bootstrap diode.
Each high voltage gate driver chip controls two IGBTs in half bridge topology, offering the
basic functions such as dead time, interlocking, integrated bootstrap diode, and also the
advanced features such as smart shutdown (patented), fault comparator, and a dedicated
high performance op amp for advanced current sensing. A schematic summary of the
features by device are listed in
Table 1.
In this application note the main characteristics of a high voltage gate drive related to the
SLLIMM are discussed. For a greater understanding, please refer to the AN2738 application
note.



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