4

INA220

SBOS459E – JUNE 2009 – REVISED JANUARY 2016

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Copyright © 2009–2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

IN+ and IN– may have a differential voltage of –26 to 26 V; however, the voltage at these pins must not exceed the range of –0.3 to 26

V.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted).

(1)

MIN

MAX

UNIT

Supply voltage

6

V

Analog inputs

IN+, IN–

(2)

–26

26

V

–0.3

26

V

Voltage at VBUS pin

–0.3

26

V

Voltage at SDA pin

GND – 0.3

6

V

Voltage at SCL pin

GND – 0.3

V

Input current into any pin

5

mA

Open-drain digital output current

10

mA

Operating temperature

–40

125

°C

Junction temperature

150

°C

Storage temperature

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

Electrostatic

discharge

±4000

V

±1000

Machine model (MM)

±150

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

12

V

Supply voltage

3.3

V

Ambient temperature

–25

85

ºC

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

7.4 Thermal Information

INA220

UNIT

DGS (VSSOP)

10 PINS

Junction-to-ambient thermal resistance

165.4

°C/W

Junction-to-case (top) thermal resistance

53.2

°C/W

Junction-to-board thermal resistance

86.6

°C/W

Junction-to-top characterization parameter

6.4

°C/W

Junction-to-board characterization parameter

85.0

°C/W