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TPS51116 Datasheet(PDF) 4 Page - Texas Instruments

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Part # TPS51116
Description  COMPLETE DDR AND DDR2 MEMORY POWER SOLUTION SYNCHRONOUS BUCK CONTROLLER, 3-A LDO, BUFFERED REFERENCE
PDF  29 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TPS51116 Datasheet(HTML) 4 Page - Texas Instruments

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TPS51116
SLUS609A – MAY 2004 – REVISED JUNE 2004
ELECTRICAL CHARACTERISTICS (continued)
over operating free-air temperature range, V
V5IN = 5 V, VLDOIN is connected to VDDQ output (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TA = 25°C, Adjustable mode
742.5
750.0
757.5
VVDDQSET
VDDQSET regulation voltage 0
°C ≤ T
A≤ 85°C, Adjustable mode
740.2
750.0
759.8
mV
-40
°C ≤ T
A≤ 85°C, Adjustable mode
738.0
750.0
762.0
VVDDQSET = 0 V
215
RVDDQSNS
Input impedance, VDDQSNS VVDDQSET = 5 V
180
k
Ω
Adjustable mode
460
VVDDQSET = 0.78 V, COMP = Open
-0.04
IVDDQSET
Input current, VDDQSET
µA
VVDDQSET = 0.78 V, COMP = 5 V
-0.06
VS3 = VS5 = 0 V, VVDDQSNS = 0.5 V,
IVDDQDisch
Discharge current, VDDQ
10
40
VMODE = 0 V
mA
VS3 = VS5 = 0 V, VVDDQSNS = 0.5 V,
IVDDOINDisch
Discharge current, VLDOIN
700
VMODE = 0.5 V
TRANSCONDUCTANCE AMPLIFIER
gm
Gain
TA = 25°C
240
300
360
µS
COMP maximum sink cur-
VS3 = 0 V, VS5 = 5 V, VVDDQSET = 0 V,
ICOMPSNK
13
rent
VVDDQSNS = 2.7 V, VCOMP = 1.28 V
µA
COMP maximum source cur- VS3 = 0 V, VS5 = 5 V, VVDDQSET = 0 V,
ICOMPSRC
-13
rent
VVDDQSNS = 2.3 V, VCOMP = 1.28 V
VS3 = 0 V, VS5 = 5 V, VVDDQSET = 0 V,
VCOMPHI
COMP high clamp voltage
1.31
1.34
1.37
VVDDQSNS = 2.3 V, VCS = 0 V
V
VS3 = 0 V, VS5 = 5 V, VVDDQSET = 0 V,
VCOMPLO
COMP low clamp voltage
1.18
1.21
1.24
VVDDQSNS = 2.7 V, VCS = 0 V
DUTY CONTROL
TON
Operating on-time
VIN = 12 V, VVDDQSET = 0 V
520
TON0
Startup on-time
VIN = 12 V, VVDDQSNS = 0 V
125
ns
TON(min)
Minimum on-time
TA = 25°C
(2)
100
TOFF(min)
Minimum off-time
TA = 25°C
(2)
350
OUTPUT DRIVERS
Source, IDRVH = -100 mA
3
6
RDRVH
DRVH resistance
Sink, IDRVH = 100 mA
0.9
3
Ω
Source, IDRVL = -100 mA
3
6
RDRVL
DRVL resistance
Sink, IDRVL = 100 mA
0.9
3
LL-low to DRVL-on (2)
10
TD
Dead time
ns
DRVL-off to DRVH-on(2)
20
INTERNAL BST DIODE
VFBST
Forward voltage
VV5IN-VBST , IF = 10 mA, TA = 25°C
0.7
0.8
0.9
V
VVBST = 34 V, VLL = 28 V, VVDDQ = 2.6 V,
IVBSTLK
VBST leakage current
0.1
1.0
µA
TA = 25°C
(2)
Ensured by design. Not production tested.
4



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