LE25S161 datasheet(1/54 Pages) ONSEMI

Part #	LE25S161

Description	Serial Flash Memory

PDF	54 Pages

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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1

Publication Order Number :

LE25S161/D

February 2016 - Rev. 1

ORDERING INFORMATION

See detailed ordering and shipping information on page 54 of this data sheet.

www.onsemi.com

LE25S161

Serial Flash Memory

16 Mb (2048K x 8)

1. Overview

The LE25S161 is a SPI bus flash memory device with a 16M bit (2048K



8-bit) configuration. It uses a single power supply. While making the most

of the features inherent to a serial flash memory device, the LE25S161 is

housed in an 8-pin ultra-miniature package. All these features make this

device ideally suited to storing program in applications such as portable

information devices, which are required to have increasingly more

compact dimensions.

The LE25S161 also has a small sector erase capability which makes the

device ideal for storing parameters or data that have fewer rewrite cycles

and conventional EEPROMs cannot handle due to insufficient capacity.

2. Features

 Operations power supply

: 1.65 to 1.95V supply voltage range

 Operating frequency

: 70MHz (max)

 Temperature range

: –40 to +90

C

 Serial interface

: SPI mode 0, mode 3 supported

 Electronic Identification

: JDEC ID, Device ID, Serial Flash Discoverable Parameter (SFDP)

 Sector size

: 4K bytes/small sector, 64K bytes/sector

 Erase functions

: small sector erase (SSE), sector erase (SE), chip erase (CHE)

 Page program function

: 256 bytes/page

 Status functions

: Ready/Busy information, protect information

 Low operation current

: 5.0mA (Low-power program mode, typ), 3.5mA (Low-Power Read mode, typ)

 Erase time

: 10ms (SSE, typ), 15ms (SE, typ), 210ms (CHE, typ)

 Page program time (tPP)

: 0.4ms/256 bytes (typ.), 0.7ms/256 bytes (max.)

 Emergency shutdown of the current consumption

: transition to a standby state in less than 20

s from the active by Write Suspend

: transition to a standby state in less than 40

s from the active by Software Reset

 High reliability

: 100,000 erase/program cycles

: 20 years data retention period

 Package

: LE25S161MDTWG SOIC 8, 150 mils

CASE 751BD

: LE25S161FDTWG VSOIC8 NB

CASE 753AA

: LE25S161XATAG WLCSP8, 2.92

1.53

CASE 567LC

: LE25S161PCTXG UDFN8 4

3, 0.8P

CASE 506DC

: KGD

N/A

UDFN8 4x3, 0.8P

WLCSP8, 2.92x1.53

SOIC 8, 150mils

VSOIC8 NB

* This product is licensed from Silicon Storage Technology, Inc. (USA).

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