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LE25S161 Datasheet(PDF) 34 Page - ON Semiconductor |
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LE25S161 Datasheet(HTML) 34 Page - ON Semiconductor |
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34 / 54 page ![]() LE25S161 www.onsemi.com 34 Read Device ID (RDDI) Also the exit from deep power-down is completed by one byte cycle or more of the Read Device ID (RID: ABh). "Table 7. Device ID code" lists the device ID codes. "Figure 21. Read Device ID " shows the timing waveforms. The sequence of EDP & RID operation : CS goes to low input RID command (ABh) 3 byte dummy cycle Device ID out on SO completed by CS=high * The Device ID is output repeatedly as long as clock inputs are present * The data output starts from the falling edge of SCK(31th clock) By setting CS to high, the device is deselected, and Read ID cycle is completed. While the device is deselected, the output pin SO is in a high-impedance state. CS High Impedance Dev ID SCK SO SI ABh X MSB 0 1 2 3 4 5 6 7 8 31 8CL Mode0 Mode3 32 X tRDP Standby current (Isb) Deep Power-down Standbycurrent (Idsb) Dev ID 24 Dummy Bits 39 Dev ID Figure 21. Read Device ID |
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