DS1963S datasheet(34/37 Pages) DALLAS

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DS1963S

34 of 37

PHYSICAL SPECIFICATION

Size

See mechanical drawing

Weight

3.3 grams

Expected Service Life

See graphic

Safety

Meets UL#913 (4th Edit.); Intrinsically Safe

Apparatus, Approval under Entity Concept for use

in Class I, Division 1, Group A, B, C and D

Locations (application pending)

ABSOLUTE MAXIMUM RATINGS*

IO Voltage to GND

-0.5V, +6V

IO sink current

20mA

Temperature Range

-40°C to +85°C

Junction Temperature

+150°C

Storage Temperature Range

-25°C to +50°C

* This is a stress rating only and functional operation of the device at these or any other conditions

above those indicated in the operation sections of this specification is not implied. Exposure to

absolute maximum rating conditions for extended periods of time may affect reliability. These

devices must not be exposed to temperatures over +70

°C for extended time periods.

ELECTRICAL CHARACTERISTICS (VPUP = 2.8V to 5.25V, TA = -40°C to +85°C)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX UNITS NOTES

IO Pin General Data

1-Wire Pullup

Resistance

RPUP

2.2

1, 2

Input Capacitance

CIO

100

800

Input Load Current

IO pin at VPUP

9µA

High-to-Low

Switching Threshold

VTL

0.7

2.9

5, 6, 7

Input Low Voltage

VIL

0.30

1, 5, 8

Low-to-High

Switching Threshold

VTH

0.6

2.9

5, 6, 9

Output Low Voltage

at 4mA

VOL

0.4

5, 10

Fall Time

5µs

Recovery Time

tREC

Standard Speed,

RPUP=2.2k

µs

1, 15

Overdrive Speed,

RPUP=2.2k

Overdrive Speed,

Directly Prior to

Reset Pulse;

RPUP=2.2k

DS1963S Datasheet(PDF) 34 Page - Dallas Semiconductor

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