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HD74AC Datasheet(PDF) 25 Page - Hitachi Semiconductor |
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HD74AC Datasheet(HTML) 25 Page - Hitachi Semiconductor |
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25 / 52 page ![]() Definition of Specifications 24 3.2 Test Conditions Figure 2 describes the input signal voltage levels to be used when testing FACT circuits. The AC test conditions follow industry convention requiring V IN to range from 0 V for a logic low to 3.0 V for a logic high for HD74ACT devices and 0 V to V CC for HD74AC devices. The DC parameters are normally tested with V IN at guaranteed input levels, that is VIH to VIL (see tables 3 and 4 for details). Care must be taken to adequately decouple these high performance parts and to protect the test signals from electrical noise. In an electrically noisy environment, (e.g., a tester and handlder not specifically designed for high-speed work), DC input levels may need to be adjusted to increase the noise margin to allow for the extra noise in the tester which would not be see in a system. Noise immunity testing is performed by raising V IN to the nominal supply voltage of 5.0 V then dropping it to a level corresponding to V IH, and then raising it again to the 5.0 V level. Noise tests can also be performed on the V IL characteristics by raising VIN from 0 V to VIL, then returning it to 0 V. Both VIH and V IL noise immunity tests should not induce a switch condition on the appropriate outputs of the FACT device. Good high-frequency wiring practices should be used in constructing test jigs. Leads on the load capacitor should be as short as possible to minimize ripples on the output waveform transitions and to minimize undershoot. Generous ground metal (preferably a ground plane) should be used for the same reasons. A V CC bypass capacitor should be provided at the test socket, also with minimum lead lengths. 3.3 Rise and Fall Times Input signals should have rise and fall times of 3.0 ns and signal swing of 0 V to 3.0 V for HD74ACT devices or 0 V to V CC for HD74ACT devices. Rise and fall times less than or equal to 1 ns should be used for testing f max or pulse widths. CMOS devices, including, 4000 Series CMOS, HC, HCT and FACT families, tend to oscillate when the input rise and fall times become lengthy. As a direct result of its increased performance, FACT devices can be more sensitive to slow input rise and fall times than other lower performance technologies. It is important to understand why this oscillation occurs. Consider the outputs, where the problem is initiated. Usually, CMOS outputs drive capacitive loads with low DC leakage. When the output changes from a high level to a low level, or from a low level to a high level, this capacitance has to be charged or discharged. With the present high performance technologies, this charging or discharging takes place in a very short time, typically 2-3 ns. The requirement to charge or discharge the capacitive loads quickly creates a condition where the instantaneous current change through the output structure is quite high. A voltage is generated across the V CC or ground leads inside the package due to the inductance of these leads. The internal ground of the chip will change in reference to the outside world become of this induced voltage. |
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