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ATTINY412 Datasheet(PDF) 49 Page - Microchip Technology |
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ATTINY412 Datasheet(HTML) 49 Page - Microchip Technology |
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49 / 479 page ![]() The flash can either be written with the erase and write separately or one command handling both: Alternative 1: • Fill the page buffer • Write the page buffer to flash with the erase-write page command Alternative 2: • Write to a location in the page to set up the address • Perform a erase page command • Fill the page buffer • Perform a write page command The NVM command set supports both a single erase and write operation, and split page erase and page write commands. This split commands enable shorter programming time for each command, and the erase operations can be done during non-time-critical programming execution. The EEPROM programming is similar, but only the bytes updated in the page buffer will be written or erased in the EEPROM. 9.3.2.4 Commands Reading of the Flash/EEPROM and writing of the page buffer is handled with normal load/store instructions. Other operations, such as writing and erasing the memory arrays, are handled by commands in the NVM. To execute a command in the NVM: 1. Write the NVM command unlock to the Configuration Change Protection register in the CPU (CPU.CCP). 2. Write the desired command value to the CMD bits in the Control A register (NVMCTRL.CTRLA) within the next 4 instructions. Write Command The write command of the Flash controller writes the content of the page buffer to the Flash or EEPROM. If the write is to the Flash, the CPU will stop executing code as long as the Flash is busy with the write operation. If the write is to the EEPROM, the CPU can continue executing code while the operation is ongoing. The page buffer will be automatically cleared after the operation is finished. Erase Command The erase command erases the current page. There must be one byte written in the page buffer for the erase command to take effect. For erasing the Flash, first write to one address in the desired page, then execute the command. The whole page in the Flash will then be erased. The CPU will be halted while the erase is ongoing. For the EEPROM, only the bytes written in the page buffer will be erased when the command is executed. To erase a specific byte, write to its corresponding address before executing the command. To erase a whole page all the bytes in the page buffer has to be updated before executing the command. The CPU can continue running code while the operation is ongoing. The page buffer will be automatically cleared after the operation is finished. ATtiny212/412 © 2017 Microchip Technology Inc. Datasheet Preliminary DS40001911A-page 49 |
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