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LTC7803 Datasheet(PDF) 21 Page - Analog Devices

Part # LTC7803
Description  40V Low IQ, 3MHz Synchronous Step-Down Controller with Spread Spectrum
PDF  36 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

LTC7803 Datasheet(HTML) 21 Page - Analog Devices

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LTC7803
21
Rev 0
For more information www.analog.com
APPLICATIONS INFORMATION
When the voltage applied to EXTVCC rises above 4.7V, the
VIN LDO is turned off and the EXTVCC LDO is enabled. The
EXTVCC LDO remains on as long as the voltage applied to
EXTVCC remains above 4.5V. The EXTVCC LDO attempts
to regulate the INTVCC voltage to 5.15V, so while EXTVCC
is less than 5.15V, the LDO is in dropout and the INTVCC
voltage is approximately equal to EXTVCC. When EXTVCC
is greater than 5.15V, up to an absolute maximum of 30V,
INTVCC is regulated to 5.15V.
Using the EXTVCC LDO allows the MOSFET driver and
control power to be derived from one of the LTC7803’s
switching regulator outputs (4.7V ≤ VOUT ≤ 30V) during
normal operation and from the VIN LDO when the output
is out of regulation (e.g., start-up, short-circuit). If more
current is required through the EXTVCC LDO than is speci-
fied, an external Schottky diode can be added between the
EXTVCC and INTVCC pins. In this case, do not apply more
than 6V to the EXTVCC pin.
Significant efficiency and thermal gains can be realized
by powering INTVCC from the output, since the VIN cur-
rent resulting from the driver and control currents will be
scaled by a factor of (Duty Cycle)/(Switcher Efficiency).
This is accomplished by tying the EXTVCC pin directly to
an output voltage that is greater than the INTVCC regula-
tion point. EXTVCC may also be connected to any other
supply in the system that is higher than the INTVCC regu-
lation point and capable of providing the MOSFET gate
drive current.
For the previous example, Tying the EXTVCC pin to an 8.5V
supply reduces the junction temperature in the previous
example from 125°C to:
TJ = 70°C + (20mA)(8.5V)(68°C/W) = 82°C
and from 125°C to 82°C in an MSOP package
TJ = 70°C + (34mA)(8.5V)(40°C/W) = 82°C
However, for 3.3V and other low voltage outputs, where
the output is less than the INTVCC regulation point and no
other supply available in the system, additional circuitry is
required to derive INTVCC power from the output.
Using the EXTVCC LDO allows the MOSFET driver and
control power to be derived from the LTC7803’s switch-
ing regulator output during normal operation and from
the VIN LDO when the output is out of regulation (e.g.,
start-up, short-circuit).
The following list summarizes the four possible connec-
tions for EXTVCC:
1. EXTVCC Grounded. This will cause INTVCC to be pow-
ered from the internal 5.15V regulator resulting in an
efficiency penalty of up to 10% at high input voltages.
2. EXTVCC Connected Directly to VOUT. This is the normal
connection for a 5V to 30V regulator and provides the
highest efficiency.
3. EXTVCC Connected to an External Supply. If an external
supply is available in the 5V to 30V range, it may be
used to power EXTVCC providing it is compatible with
the MOSFET gate drive requirements. The supply may
be higher or lower than VIN, however, a lower EXTVCC
voltage results in higher efficiency.
4. EXTVCC Connected to an Output-Derived Boost
Network. For regulators where the output is below
5V, efficiency gains can still be realized by connect-
ing EXTVCC to an output-derived voltage that has been
boosted to greater than 5V.
Topside MOSFET Driver Supply CB
An external bootstrap capacitor, CB, connected to the
BOOST pin supplies the gate drive voltage for the topside
MOSFET. Capacitor CB in the Block Diagram is charged
through external diode DB from INTVCC when the SW pin
is low. When the topside MOSFET is to be turned on, the
driver places the CB voltage across the gate-source of
the MOSFET. This enhances the top MOSFET switch and
turns it on. The switch node voltage, SW, rises to VIN and
the BOOST pin follows. With the topside MOSFET on, the
boost voltage is above the input supply: VBOOST = VIN +
VINTVCC. The value of the boost capacitor, CB, needs to be
100 times that of the total input capacitance of the topside



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