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RX113 Datasheet(PDF) 98 Page - Renesas Technology Corp |
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RX113 Datasheet(HTML) 98 Page - Renesas Technology Corp |
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98 / 131 page ![]() R01DS0216EJ0120 Rev.1.20 Page 98 of 131 Sep 07, 2020 RX113 Group 5. Electrical Characteristics 5.4 USB Characteristics Figure 5.54 USB0_DP and USB0_DM Output Timing Table 5.36 USB Characteristics (USB0_DP and USB0_DM Pin Characteristics) Conditions: 3.0 V ≤ VCC = VCC_USB ≤ 3.6 V, 3.0 V ≤ AVCC0 ≤ 3.6 V, VSS = AVSS0 = VSS_USB = 0 V, T a = –40 to +105°C Item Symbol Min. Max. Unit Test Conditions Input characteristics Input high level voltage VIH 2.0 — V Input low level voltage VIL —0.8 V Differential input sensitivity VDI 0.2 — V | USB0_DP – USB0_DM | Differential common mode range VCM 0.8 2.5 V Output characteristics Output high level voltage VOH 2.8 VCC_USB V IOH = –200 µA Output low level voltage VOL 0.0 0.3 V IOL = 2 mA Cross-over voltage VCRS 1.3 2.0 V Figure 5.54 Figure 5.55 Rise time FS tr 420 ns LS 75 300 Fall time FS tf 420 ns LS 75 300 Rise/fall time ratio FS tr/tf 90 111.11 % tr/tf LS 80 125 Output resistance ZDRV 28 44 Ω (Adjusting the resistance of external elements is not necessary.) VBUS characteristics VBUS input voltage VIH 0.8 × VCC — V VIL — 0.2 × VCC V VBUS (P16) input leakage current | IVBUSIN | — 10 µA USB0_VBUS = 5.5 V Pull-up, pull-down Pull-down resistor RPD 14.25 24.80 k Ω Pull-up resistor RPUI 0.9 1.575 k Ω During idle state RPUA 1.425 3.09 k Ω During reception Battery Charging Specification Ver 1.2 USB0_DP sink current IDP_SINK 25 175 µA USB0_DM sink current IDM_SINK 25 175 µA DCD source current IDP_SRC 713 µA Data detection voltage VDAT_REF 0.25 0.4 V USB0_DP source current VDP_SRC 0.5 0.7 V Output current = 250 µA USB0_DM source current VDM_SRC 0.5 0.7 V Output current = 250 µA USB0_DP, USB0_DM tf tr 90% 10% 10% 90% VCRS |
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