TPSM82821 datasheet(4/54 Pages) TI

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7 Specifications

7.1 Absolute Maximum Ratings

Over operating junction temperature range (unless otherwise noted) (1)

MIN

MAX

UNIT

Pin voltage

VIN, VOUT, FB, EN, PG (2)

–0.3

ISINK_PG

Sink current at PG pin

Operating junction temperature

–40

125

°C

Tstg

Storage temperature

–55

125

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress

ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under

Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability.

(2)

All voltage values are with respect to the network ground terminal.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1)

±2000

Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2)

±1000

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

MIN

MAX

UNIT

VIN

Input voltage

2.4

5.5

VOUT

Output voltage range

0.6

VPG

Pullup resistor voltage

5.5

IOUT

Output current range, TPSM82821, TPSM82821A (1)

Output current range, TPSM82822, TPSM82822A (1)

Output current range, TPSM82823,TPSM82823A (1)

Junction temperature (1)

–40

125

°C

(1)

In applications where high power dissipation and high ambient temperatures are present, the maximum output current must be derated

to operate the module within its operating temperature range. See Section 11.2.1.

7.4 Thermal Information

THERMAL METRIC(1)

TPSM8282x

UNIT

μSiL (JEDEC 51-7)

TPSM8282xEVM-080

TPSM8282xAEVM-127

10-PINS

RθJA

Junction-to-ambient thermal resistance

92.6

64.3

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

49.6

n/a (2)

°C/W

RθJB

Junction-to-board thermal resistance

27.7

n/a (2)

°C/W

ψJT

Junction-to-top characterization parameter

5.8

4.3

°C/W

ψJB

Junction-to-board characterization parameter

26.9

22.4

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

(2)

Not applicable to an EVM.

TPSM82823, TPSM82822, TPSM82821, TPSM82823A, TPSM82822A, TPSM82821A

SLVSEP0F – AUGUST 2019 – REVISED NOVEMBER 2021

www.ti.com

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