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MMPF0100 Datasheet(PDF) 69 Page - NXP Semiconductors |
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MMPF0100 Datasheet(HTML) 69 Page - NXP Semiconductors |
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69 / 137 page ![]() NXP Semiconductors 69 PF0100 FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS Figure 24. SW3AB efficiency waveforms: VIN = 4.2 V; VOUT = 1.5 V; consumer version Switch Mode Supply SW3a/B (Continued) ISW3APQ SW3A P-MOSFET leakage current • VIN = VINSW3A = 4.5 V –– 7.5 µA ISW3ANQ SW3A N-MOSFET leakage current • VIN = VINSW3A = 4.5 V –– 2.5 µA RONSW3BP SW3B P-MOSFET RDS(on) • at VIN = VINSW3B = 3.3 V – 215 245 m Ω RONSW3BN SW3B N-MOSFET RDS(on) • at VIN = VINSW3B = 3.3 V – 258 326 m Ω ISW3BPQ SW3B P-MOSFET leakage current • VIN = VINSW3B = 4.5 V –– 7.5 µA ISW3BPQ SW3B N-MOSFET leakage current • VIN = VINSW3B = 4.5 V –– 2.5 µA RSW3xDIS Discharge resistance – 600 – Ω Notes 55. When output is set to > 2.6 V the output follows the input down when VIN gets near 2.8 V. 56. The higher output voltages available depend on the voltage drop in the conduction path as given by the following equation: (VINSW3x - VSW3x) = ISW3x* (DCR of inductor +RONSW3xP + PCB trace resistance). Table 78. SW3A/B electrical characteristics (continued) All parameters are specified at TMIN to TMAX (See Table 3), VIN = VINSW3x = 3.6 V, VSW3x = 1.5 V, ISW3x = 100 mA, SW3x_PWRSTG[2:0] = [111], typical external component values, fSW3x = 2.0 MHz, single/dual phase and independent mode unless, otherwise noted. Typical values are characterized at VIN = VINSW3x = 3.6 V, VSW3x = 1.5 V, ISW3x = 100 mA, SW3x_PWRSTG[2:0] = [111], and 25 °C, unless otherwise noted. Symbol P arameter Min. Typ. Max. Unit Notes 0 10 20 30 40 50 60 70 80 90 100 0.1 1 10 100 1000 E ff ic ie n c y (% ) Load Current (mA) PFM 0 10 20 30 40 50 60 70 80 90 100 10 100 1000 10000 E ff ic ie n c y (% ) Load Current (mA) APS PWM |
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