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MMPF0100 Datasheet(PDF) 85 Page - NXP Semiconductors |
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MMPF0100 Datasheet(HTML) 85 Page - NXP Semiconductors |
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85 / 137 page ![]() NXP Semiconductors 85 PF0100 FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS 6.4.6.5 LDO specifications 6.4.6.5.1 VGEN1 Table 102. VGEN1 electrical characteristics All parameters are specified at TMIN to TMAX (See Table 3), VIN = 3.6 V, VIN1 = 3.0 V, VGEN1[3:0] = 1111, IGEN1 = 10 mA, typical external component values, unless otherwise noted. Typical values are characterized at VIN = 3.6 V, IN1 = 3.0 V, VGEN1[3:0] = 1111, IGEN1 = 10 mA, and 25 °C, unless otherwise noted. Symbol Parameter Min. Typ. Max. Unit Notes VGEN1 VIN1 Operating input voltage 1.75 – 3.40 V VGEN1NOM Nominal output voltage – Table 92 –V IGEN1 Operating load current 0.0 – 100 mA VGEN1 DC VGEN1TOL Output voltage tolerance • 1.75 V < VIN1 < 3.4 V • 0.0 mA < IGEN1 < 100 mA • VGEN1[3:0] = 0000 to 1111 -3.0 – 3.0 % VGEN1LOR Load regulation • (VGEN1 at IGEN1 = 100 mA) - (VGEN1 at IGEN1 = 0.0 mA) • For any 1.75 V < VIN1 < 3.4 V –0.15 – mV/mA VGEN1LIR Line regulation • (VGEN1 at VIN1 = 3.4 V) - (VGEN1 at VIN1 = 1.75 V) • For any 0.0 mA < IGEN1 < 100 mA –0.30 – mV/mA IGEN1LIM Current limit • IGEN1 when VGEN1 is forced to VGEN1NOM/2 122 167 200 mA IGEN1OCP Overcurrent protection threshold • IGEN1 required to cause the SCP function to disable LDO when REGSCPEN = 1 115 – 200 mA IGEN1Q Quiescent current • No load, change in IVIN and IVIN1 • When VGEN1 enabled –14– μA VGEN1 AC and transient PSRRVGEN1 PSRR •IGEN1 = 75 mA, 20 Hz to 20 kHz • VGEN1[3:0] = 0000 - 1101 • VGEN1[3:0] = 1110, 1111 50 37 60 45 – – dB (66) NOISEVGEN1 Output noise density • VIN1 = 1.75 V, IGEN1 = 75 mA • 100 Hz – <1.0 kHz • 1.0 kHz – <10 kHz • 10 kHz – 1.0 MHz – – – -108 -118 -124 -100 -108 -112 dBV/ √Hz SLWRVGEN1 Turn-on slew rate • 10% to 90% of end value • 1.75 V ≤ VIN1 ≤ 3.4 V, IGEN1 = 0.0 mA • VGEN1[3:0] = 0000 to 0111 • VGEN1[3:0] = 1000 to 1111 – – – – 12.5 16.5 mV /μs GEN1tON Turn-on time • Enable to 90% of end value, VIN1 = 1.75 V, 3.4 V • IGEN1 = 0.0 mA 60 – 500 μs |
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