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MMPF0100 Datasheet(PDF) 79 Page - NXP Semiconductors

Part # MMPF0100
Description  14 channel configurable power management integrated circuit
PDF  137 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

MMPF0100 Datasheet(HTML) 79 Page - NXP Semiconductors

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NXP Semiconductors
79
PF0100
FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS
6.4.5.3
SWBST specifications
Table 90. SWBST Electrical Specifications
All parameters are specified at TMIN to TMAX (See Table 3), VIN = VINSWBST = 3.6 V, VSWBST = 5.0 V, ISWBST = 100 mA, typical external
component values, fSWBST = 2.0 MHz, otherwise noted. Typical values are characterized at VIN = VINSWBST = 3.6 V, VSWBST = 5.0 V,
ISWBST = 100 mA, and 25 °C, unless otherwise noted.
Symbol
Parameters
Min.
Typ.
Max.
Units
Notes
Switch mode supply SWBST
VINSWBST
Input voltage range
2.8
–
4.5
V
VSWBST
Nominal output voltage
–
Table 88
–V
VSWBSTACC
Output voltage accuracy
• 2.8 V
≤ VIN ≤ 4.5 V
• 0 < ISWBST < ISWBSTMAX
-4.0
–
3.0
%
ΔVSWBST
Output ripple
• 2.8 V
≤ VIN ≤ 4.5 V
• 0 < ISWBST < ISWBSTMAX, excluding reverse recovery of
Schottky diode
–
–
120
mV Vp-p
VSWBSTLOR
DC load regulation
• 0 < ISWBST < ISWBSTMAX
–0.5
–
mV/mA
VSWBSTLIR
DC line regulation
• 2.8 V
≤ VIN ≤ 4.5 V, ISWBST = ISWBSTMAX
–
50
–
mV
ISWBST
Continuous load current
• 2.8 V
≤ VIN ≤ 3.0 V
• 3.0 V
≤ VIN ≤ 4.5 V
–
–
–
–
500
600
mA
ISWBSTQ
Quiescent current
• Auto
–
222
289
μA
RDSONBST
MOSFET on resistance
–
206
306
m
Ω
ISWBSTLIM
Peak current limit
1400
2200
3200
mA
(63)
VSWBSTOSH
Start-up overshoot
• ISWBST = 0.0 mA
–
–
500
mV
VSWBSTTR
Transient load response
• ISWBST from 1.0 mA to 100 mA in 1.0 µs
• Maximum transient amplitude
–
–
300
mV
VSWBSTTR
Transient load response
• ISWBST from 100 mA to 1.0 mA in 1.0 µs
• Maximum transient amplitude
–
–
300
mV
tSWBSTTR
Transient load response
• ISWBST from 1.0 mA to 100 mA in 1.0 µs
• Time to settle 80% of transient
–
–
500
µs
tSWBSTTR
Transient load response
• ISWBST from 100 mA to 1.0 mA in 1.0 µs
• Time to settle 80% of transient
––
20
ms
ISWBSTHSQ
NMOS Off leakage
• SWBSTIN = 4.5 V, SWBSTMODE [1:0] = 00
–1.0
5.0
µA
tONSWBST
Turn-on time
• Enable to 90% of VSWBST, ISWBST = 0.0 mA
––
2.0
ms
fSWBST
Switching frequency
–
2.0
–
MHz
ηSWBST
Efficiency
• ISWBST = ISWBSTMAX
–86
–
%
Notes
63.
Only in auto mode.



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