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ADM7151 Datasheet(PDF) 9 Page - Analog Devices

Part # ADM7151
Description  Dual 500mA, Positive/Negative, Ultra-Low Noise, Ultra-High PSRR Low Dropout Linear Regulator
PDF  45 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

ADM7151 Datasheet(HTML) 9 Page - Analog Devices

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Data Sheet
LT3097
ABSOLUTE MAXIMUM RATINGS
analog.com
Rev. 0 | 9 of 45
Table 2. Absolute Maximum Ratings
Parameter
Value
INP Pin Voltage
±22 V
INN Pin Voltage
with Respect to GND Pin
–22 V to +0.3 V
ENP/UVP Pin Voltage
±22 V
ENN/UVN Pin Voltage
with Respect to INN Pin1
–0.3 V to +30 V
with Respect to GND Pin
±22 V
INP-to-ENP/UVP Differential
±22 V
PGP Pin Voltage2
–0.3 V, +22 V
PGN Pin Voltage
with Respect to INN Pin1
–0.3 V to +30 V
with Respect to GND Pin
–0.3 V to +22 V
ILIMP Pin Voltage2
–0.3 V, +1 V
ILIMN Pin Voltage
with Respect to INN Pin1
–0.3 V to +22 V
PGFBP Pin Voltage2
–0.3 V, +22 V
PGFBN Pin Voltage
with Respect to INN Pin1
–0.3 V to +30 V
with Respect to GND Pin
±22 V
SETP Pin Voltage2
–0.3 V, +16 V
SETP Pin Current3
±20 mA
SETN Pin Voltage
with Respect to INN Pin1
–0.3 V, +22 V
with Respect to GND Pin
±22 V
SETN Pin Current4
±10 mA
OUTSP Pin Voltage2
–0.3 V, +16 V
OUTSP Pin Current3
±20 mA
OUTSN Pin Voltage
with Respect to INN Pin1
–0.3 V, +22 V
with Respect to GND Pin
±22 V
OUTSN Pin Current4
±10 mA
SETN-to-OUTSN Differential5
±22 V
OUTP Pin Voltage2
–0.3 V, +16 V
OUTN Pin Voltage
with Respect to INN Pin1
–0.3 V, +22 V
with Respect to GND Pin
±22 V
OUTP-to-OUTSP Differential6
±1.2 V
OUTN-to-OUTSN Differential7
±22 V
INP-to-OUTP Differential
±22 V
INP-to-OUTSP Differential
±22 V
Output Short-Circuit Duration
Indefinite
Temperature
Operating TJ Range8, A Grade
–40°C to +125°C
Storage Range
–65°C to +150°C
1 Parasitic diodes exist internally between the ENN/UVN, ILIMN, PGN, PGFBN,
SETN, GND, OUTSN, and OUTN pins and the INN pin. Do not drive the
ENN/UVN, ILIMN, PGN, PGFBN, SETN, GND, OUTSN, and OUTN pins more
than 0.3 V below the INN pin voltage during a fault condition. The ENN/UVN,
ILIMN, PGN, PGFBN, SETN, GND, OUTSN, and OUTN pins must remain at a
voltage more positive than INN during normal operation.
2 Parasitic diodes exist internally between the ILIMP, PGP, PGFBP, SETP,
OUTSP, and OUTP pins and the GND pin. Do not drive the ILIMP, PGP,
PGFBP, SETP, OUTSP, and OUTP pins more than 0.3 V below the GND pin
voltage during a fault condition. The ILIMP, PGP, PGFBP, SETP, OUTSP, and
OUTP pins must remain at a voltage more positive than GND during normal
operation.
3 SETP and OUTSP pins are clamped using diodes and two 25 Ω series
resistors. For less than 5 ms transients, this clamp circuitry can carry more
than the rated current. For more details, see the Figure 122 and the Protection
Features section.
4 SETN and OUTSN pins are clamped using diodes and two 400 Ω series
resistors. For less than 5 ms transients, this clamp circuitry can carry more
than the rated current. For more details, see the Figure 123 and the Protection
Features section.
5 Maximum SETN and OUTSN pin current requirement must be satisfied.
6 Maximum OUTP-to-OUTSP differential is guaranteed by design.
7 Maximum OUTN-to-OUTSN differential is guaranteed by design.
8 The LT3097 is tested and specified under pulse load conditions such that TJ
≈ TA. The LT3097 is tested at TA = 25°C. Performance of the LT3097 over
the full –40°C to 125°C operating temperature range is assured by design,
characterization, and correlation with statistical process controls. The LT3097
is guaranteed over the full –40°C to 125°C operating TJ range.
Stresses at or above those listed under Absolute Maximum Ratings
can cause permanent damage to the product. This is a stress
rating only; functional operation of the product at these or any other
conditions above those indicated in the operational section of this
specification is not implied. Operation beyond the maximum operat-
ing conditions for extended periods can affect product reliability.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Charged devi-
ces and circuit boards can discharge without detection. Although
this product features patented or proprietary protection circuitry,
damage may occur on devices subjected to high energy ESD.
Therefore, proper ESD precautions should be taken to avoid
performance degradation or loss of functionality.



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