ERTEC datasheet(40/51 Pages) RENESAS

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Data Sheet A17989EE2V0DS00

µPD800261

(2)

LBU Write to ERTEC 200 with separate Read/Write line (LBU_RDY_N active low)

TA = -40 to +85°C, VDDCore = 1.35 V ~ 1.65 V, VDDIO = 3.0 V ~ 3.6 V

Figure 2-5:

LBU Write to ERTEC 200 with Separate Read/Write line

Table 2-7: LBU Write to ERTEC 200 with Separate Read/Write line

Parameter

Symbol

Condition

MIN.

MAX.

Unit

Chip select asserted to write pulse

asserted delay

tCSWS

-0

Address valid to write pulse asserted

setup time

tAWS

-0

Write pulse asserted to ready enabled

delay

tWRE

Write pulse asserted to data valid delay

tWDV

Ready active pulse width

tRAP

-17

Write pulse deasserted to chip select

deasserted delay

tWCSH

-0

Address hold time after write strobe

deasserted

tWAH

-0

Ready asserted to write pulse deas-

serted delay

tRTW

-0

Data hold time after write pulse deas-

serted

tWDH

-0

Write recovery time

tWR

-25

LBU_CS_R_N/

LBU_CD_M_N

LBU_WR_N

LBU_A(20:0)/

LBU_SEG(1:0)

LBU_BE(1:0)_N

LBU_RDY_N

LBU_D(15:0)

CSWS

AWS

WRE

WDV

RAP

RTW

WAH

WDH

WCSH

ERTEC Datasheet(PDF) 40 Page - Renesas Technology Corp

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