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VR5510 Datasheet(PDF) 40 Page - NXP Semiconductors |
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VR5510 Datasheet(HTML) 40 Page - NXP Semiconductors |
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40 / 203 page ![]() NXP Semiconductors VR5510 Multi-output PMIC with SMPS and LDO Symbol Parameter Min Typ Max Unit DVS Ramp down Speed , BUCK12DVS_RAMP_OTP[1:0] = 00 7.87 13.02 19.75 mV/μs DVS Ramp down Speed , BUCK12DVS_RAMP_OTP[1:0] = 01 3.87 6.51 9.87 mV/μs DVS Ramp down Speed , BUCK12DVS_RAMP_OTP[1:0] = 10 1.95 3.25 4.92 mV/μs VBUCK12_DVS_DOWN (1.8 V) DVS Ramp down Speed , BUCK12DVS_RAMP_OTP[1:0] = 11 1.67 2.78 4.22 mV/μs TBUCK12_OFF_MIN HS minimum OFF time 9 27 54 ns RBUCK12_HS_RON HS PMOS RDSon, 3.6 Vgs, Tj = 125 C — — 135 mΩ RBUCK12_LS_RON LS NMOS RDSon, 3.6 Vgs, Tj = 125 C — — 80 mΩ RBUCK12_DISch Discharge Resistance (when BUCK1,2 is disabled and ramp down completed) — 20 40 Ω TSDBUCK12 Thermal shutdown threshold 155 — — °C TBUCK12_TSD Thermal shutdown filtering time — 20 30 μs Table 17. Electrical characteristics...continued 12.6 BUCK1 and BUCK2 efficiency Table 18 shows BUCK1 and BUCK2 efficiency versus current load based on a typical external component and a 4.1 V VPRE voltage. For external components with characteristics different from the ones shown below, use the VR5510 Power Calculator tool to recalculate the theoretical efficiency. The real efficiency must be verified by measurement at the application level. Ext. C and L Cin 60 μF ESR Cin 10 mΩ Cout 44 μF ESR Cout 10 mΩ L coil 1 μH DCR coil 30 mΩ Int. MOSFET HS_Rdson 135 mΩ QH 0.5 nC THS_sw 5 ns GHS_drive 5 V LS-Rdson 80 mΩ QLS 0.5 nC TLS_sw 5 ns GLS_drive 5 V Ibuck1,2 (A) 0 2.75 2.0 1.0 BUCK1,2 Efficiency vs Ibuck1,2 1.25 0.25 0.5 0.75 2.25 2.5 1.50 1.75 aaa-039376 80 70 90 100 60 85 75 95 65 1.8 V 1.25 V 0.8 V Table 18. BUCK1 and BUCK2 theoretical efficiency VR5510 All information provided in this document is subject to legal disclaimers. © 2023 NXP B.V. All rights reserved. Product data sheet Rev. 6 — 31 July 2023 40 / 203 |
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