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RT3662EB Datasheet(PDF) 18 Page - Richtek Technology Corporation |
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RT3662EB Datasheet(HTML) 18 Page - Richtek Technology Corporation |
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18 / 28 page ![]() RT3662EB Copyright © 2019 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation. www.richtek.com DS3662EB-04 August 2019 18 Application Information Power Ready (POR) Detection During start-up, the RT3662EB will detect the voltage at the voltage input pins : VCC, PVCC and EN. When VCC > 4.3V and PVCC > 3.85V, the IC will recognize the power state of system to be ready (POR = high) and wait for enable command at the EN pin. After POR = high and VEN > 2V, the IC will enter start-up sequence for VDDC. If the voltage of VCC and EN pin drop below low threshold, the IC will enter power down sequence and all the functions will be disabled. Normally, connecting system power to the EN pin is recommended. The SVID will be ready in 2ms (max) after the chip has been enabled. All the protection latches (OVP, OCP, UVP) will be cleared only after POR = low. The condition of VEN = low will not clear these latches. EN + - + - Chip EN POR 4.3V 3.85V 2V VCC PVCC CMP CMP CMP + - Figure 1. Power Ready (POR) Detection Boot VID When EN goes high, VDDC output begin to soft-start to the Boot VID in CCM. Table 5 shows the Boot VID setting. The Boot VID is determined by the SVC and SVD input states at EN rising edge and it is in the internal register. The digital soft-start circuit ramps up the reference voltage at a controlled slew rate to reduce inrush current during start-up. When all the output voltages are above power good threshold (300mV below Boot VID) at the end of soft-start, the controller asserts power good (PGOOD) after a time delay. Table 5. 2-Bit Boot VID Code Initial Startup VID (Boot VID) SVC SVD VDDC Output Voltage (V) 0 0 1.1 0 1 1.0 1 0 0.9 1 1 0.8 Start-Up Sequence After EN goes high, the RT3662EB starts up and operates according to the initial settings. Figure 2 shows the simplified sequence timing diagram. The detailed operation is described in the following. |
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