56F8014 datasheet(97/125 Pages) FREESCALE

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Flash Memory Characteristics

56F8014 Technical Data, Rev. 9

Freescale Semiconductor

Preliminary

Figure 10-2 Input Signal Measurement References

Figure 10-3 shows the definitions of the following signal states:

•

Active state, when a bus or signal is driven, and enters a low impedance state

•

Tri-stated, when a bus or signal is placed in a high impedance state

•

Data Valid state, when a signal level has reached VOL or VOH

•

Data Invalid state, when a signal level is in transition between VOL and VOH

Figure 10-3 Signal States

10.4 Flash Memory Characteristics

Table 10-9 Flash Timing Parameters

Characteristic

Symbol

Min

Typ

Max

Unit

Program time1

1. There is additional overhead which is part of the programming sequence. See the 56F801X Peripheral Reference

Manual for details.

Tprog

—

μs

Erase time2

2. Specifies page erase time. There are 512 bytes per page in the Program Flash memory.

Terase

—

Mass erase time

Tme

100

—

VIH

VIL

Fall Time

Input Signal

Note: The midpoint is VIL + (VIH – VIL)/2.

Midpoint1

Low

High

90%

50%

10%

Rise Time

Data Invalid State

Data1

Data2 Valid

Data

Tri-stated

Data3 Valid

Data2

Data3

Data1 Valid

Data Active

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