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TMP89FS60 Datasheet(PDF) 396 Page - Toshiba Semiconductor |
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TMP89FS60 Datasheet(HTML) 396 Page - Toshiba Semiconductor |
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396 / 410 page ![]() Page 382 25. Electrical Characteristics 25.3 DC Characteristics TMP89FS60 RA003 Note 1: Typical values shown are Topr = 25°C and V DD = 5.0 V, unless otherwise specified. Note 2: IDD does not include IREF. It is the electrical current in the state in which the peripheral circuitry has been operated. Note 3: VIN : The input voltage on the pin except MODE pin, VMODE : The input voltage on the MODE pin Note 4: When performing a write or erase on the flash memory or activating a security program in the flash memory, make sure that the operating temperature Topr is within the range −10°C to 40°C. If the temperature is outside this range, the result- ant performance cannot be guaranteed. Note 5: In SLOW1 mode, the difference between the peak current and the average current becomes large. Note 6: Each supply current in SLOW2 mode is equivalent to that in IDLE0, IDLE1 and IDLE2 modes. Note 7: When a program operates in the flash memory or when data is being read from the flash memory, the flash memory oper- ates intermittently, and a peak current flows, as shown in Figure 25-4. In this case, the supply current IDD (in NORMAL1, NORMAL2 and SLOW1 modes) is defined as the sum of the average peak current and MCU current. Note 8: If a write or erase is performed on the flash memory or a security program is enabled in the flash memory, an instanta- neous peak current flows, as shown in Figure 25-5. Note 9: The circuit of a power supply must be designed such as to enable the supply of a peak current. This peak current causes the supply voltage in the device to fluctuate. Connect a bypass capacitor of about 0.1 µF near the power supply of the device to stabilize its operation. (VSS = 0 V, Topr = −40 to 85°C) Parameter Symbol Pins Condition Min Typ. Max Unit Supply current in NORMAL 1, 2 modes (Note 7) IDD (Note 8) VDD = 5.5 V VIN = 5.3 V/0.2 V VMODE=5.3V/0.1V fcgck = 8.0 MHz fs = 32.768 kHz When a program operates on flash memory − 17.0 20.0 mA When a program operates on RAM − 7.5 10.0 Supply current in IDLE0, 1, 2 modes − 5.0 7.0 Supply current in SLOW1 mode (Notes 5 and 7) VDD = 3.0 V VIN = 2.8 V/0.2 V VMODE=2.8V/0.1V fs = 32.768 kHz When a program operates on flash memory − 25.0 43.0 µA When a program operates on RAM (FLSSTB<FSTB> = 0) − 20.0 38.0 When a program operates on RAM (FLSSTB<FSTB> = 1) − 15.0 33.0 Supply current in SLEEP1 mode − 12.0 25.0 Supply current in SLEEP0 mode − 10.0 23.0 Supply current in STOP mode VDD = 5.5 V VIN = 5.3 V/0.2 V VMODE=5.3V/0.1V − 10.0 25.0 Peak current of inter- mittent operation (Notes 7 and 9) IDDRP-P VDD = 5.5 V VIN = 5.3 V/0.2 V VMODE=5.3V/0.1V When a program operates on flash memory or when data is being read from flash memory − 10.0 − mA VDD = 3.0V VIN = 2.8 V/0.2 V VMODE=2.8V/0.1V − 2.0 − Current for writing to flash memory, erasing and security program (Notes 4, 8 and 9) IDDEW VDD = 5.5 V VIN = 5.3 V/0.2 V VMODE=5.3V/0.1V − 26.0 − |
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