BQ25882 datasheet(6/86 Pages) TI2

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BQ25883

SLUSDL3A – FEBRUARY 2019 – REVISED APRIL 2019

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7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

Voltage Range (with respect to GND unless otherwise

specified)

VBUS (converter not switching)

-0.3

PMID (converter not switching)

-0.3

8.5

BAT, SYS (converter not switching)

-0.3

BTST

-0.3

REGN, STAT, /PG, TS

-0.3

ILIM

-0.3

BTST to SW

-0.3

D+, D-, /CE, SDA, SCL, /INT

-0.3

Output Sink Current

/INT, STAT, /PG

Junction Temperature, TJ

–40

150

°C

Storage temperature, Tstg

–40

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per

ANSI/ESDA/JEDEC JS-001(1)

±2000

Charged device model (CDM), per JEDEC

specification JESD22-C101(2)

±250

(1)

The inherent switching noise voltage spikes should not exceed the absolute maximum rating on SW pin. A tight layout minimizes

switching noise.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

IVBUS

Average input current (VBUS)

3.3

IBAT

Average charge current (IBAT)

2.2

IBAT_RMS

RMS discharging current with internal MOSFET

IBAT_PK

Peak discharging current with internal MOSFET

9 (up to

1us)

VBAT

Battery Voltage

9.2(1)

Operating free-air temperature range

-40

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

7.4 Thermal Information

over operating free-air temperature range (unless otherwise noted)

THERMAL METRIC(1)

BQ25883

UNIT

RGE (VQFN)

24-PIN

RΘJA

Junction-to-ambient thermal resistance

32.4

°C/W

RΘJC(top)

Junction-to-case (top) thermal resistance

26.7

°C/W

RΘJB

Junction-to-board thermal resistance

10.7

°C/W

ΨJT

Junction-to-top characterization parameter

0.4

°C/W

ΨJB

Junction-to-board characterization parameter

10.6

°C/W

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