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BQ25882 Datasheet(PDF) 8 Page - Texas Instruments |
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BQ25882 Datasheet(HTML) 8 Page - Texas Instruments |
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8 / 86 page  8 BQ25883 SLUSDL3A – FEBRUARY 2019 – REVISED APRIL 2019 www.ti.com Product Folder Links: BQ25883 Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated Electrical Characteristics (continued) VVBUS_UVLO_RISING< VVBUS < VVBUS_OV, TJ = -40°C to+125°C, and TJ = 25°C for typical values (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ICHG_ACC Fast Charge current regulation accuracy ICHG = 250 mA, VBAT = 6.2 V or 7.6 V, TJ = 0°C to 85°C -25 25 % IPRECHG_RANGE Precharge current range 50 800 mA IPRECHG_STEP Typical precharge current step 50 mA IPRECHG_ACC Precharge current accuracy VBAT = 5.2 V, IPRECHG = 200 mA, TJ = 25°C 170 237 mA VBAT = 5.2 V, IPRECHG = 200 mA, TJ = 0°C to 85°C 150 245 mA ITERM_RANGE Termination current range 50 800 mA ITERM_STEP Typical termination current step 50 mA ITERM_ACC Termination current accuracy ICHG = 1.5A, ITERM = 150 mA, TJ = 25°C 143 157 mA ICHG = 1.5A, ITERM = 150 mA, TJ = 0°C to 85°C 120 180 mA ICHG = 1.5A, ITERM = 50 mA, TJ = 25°C 45 60 mA ICHG = 1.5A, ITERM = 50 mA, TJ = 0°C to 85°C 22 75 mA VBAT_SHORT_RISING Short Battery Voltage rising threshold to start pre-charging VBAT rising 4.1 4.4 4.7 V VBAT_SHORT_FALLIN G Short Battery Voltage falling threshold to stop pre-charging VBAT falling 3.7 4 4.3 V IBAT_SHORT Low Battery Voltage trickle charging current VBAT < 4.4 V 100 mA VBAT_LOWV_RISING VBAT LOWV Rising threshold to start fast-charging VBAT rising, VBATLOWV = 6.0 V 5.7 6 6.3 V VBAT rising, VBATLOW = 5.6 V 5.3 5.6 5.9 V VBAT_LOWV_FALLING VBAT LOWV Falling threshold to stop fast-charging VBAT falling, VBATLOW = 5.6 V 4.9 5.2 5.5 V VBAT falling, VBATLOWV = 6.0 V 5.3 5.6 5.9 V VRECHG Recharge threshold below VREG VBAT falling, VRECHG[1:0] = 01 200 mV VBAT falling, VRECHG[1:0] = 10 300 mV RON_QHS (Q2) High-side switching MOSFET on- resistance between SW and SYS (Q2) TJ = 25°C 32 34.2 mΩ TJ = – 40°C to 125°C 32 46.5 mΩ RON_QLS (Q3) Low-side switching MOSFET on- resistance between SW and GND (Q3) TJ = 25°C 42 45.8 mΩ TJ = – 40°C to 125°C 42 62.9 mΩ RON_QBAT (Q4) MOSFET on-resistance between SYS and BAT (Q4) TJ = 25°C 18 18.8 mΩ TJ = – 40°C - 85°C 18 22.5 mΩ IBAT_DISCHG BAT Discharge current source VBAT = 8V, EN_BAT_DISCHG = 1 8 11.5 16 mA INPUT VOLTAGE / CURRENT REGULATION VINDPM_RANGE Input voltage regulation range 3.9 5.5 V VINDPM_STEP Input voltage regulation step 100 mV VINDPM Input voltage limit VINDPM = 3.9 V 3.783 3.9 4.017 V VINDPM = 4.4 V 4.268 4.4 4.532 V IINDPM_RANGE Input current regulation range 500 3300 mA IINDPM_STEP Input current regulation step 100 mA IINDPM_ACC Input current regulation limit IINDPM = 500 mA 438 469 500 mA IINDPM = 900 mA 765 832 900 mA IINDPM = 2500 mA 2125 2312 2500 mA IINDPM = 3000 mA 2550 2775 3000 mA KILIM IINMAX = KILIM/RILIM Input Current regulation by ILIM pin = 1.5A 1012 1098 1185 A x Ω |
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