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TLV6703

SBOS865B – JANUARY 2018 – REVISED NOVEMBER 2019

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Copyright © 2018–2019, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltages are with respect to network ground pin.

7 Specifications

7.1 Absolute Maximum Ratings

over operating temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Voltage(2)

VDD

–0.3

20

V

OUT

–0.3

20

SENSE

–0.3

7

Current

OUT (output sink current)

40

mA

Temperature

Operating junction, TJ

–40

125

°C

Storage, Tstg

–65

150

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1)

±2500

V

Charged device model (CDM), per JEDEC specification JESD22-C101, all pins (2)

±1000

7.3 Recommended Operating Conditions

over operating temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VDD

Supply voltage

1.8

18

V

VI

Input voltage

SENSE

0

6.5

V

VO

Output voltage

OUT

0

18

V

(1)

For more information about traditional and new thermal metrics, see the Semiconductor an IC Package Thermal Metrics application

report.

7.4 Thermal Information

THERMAL METRIC(1)

TLV6703

UNIT

DDC

(SOT)

DSE

(WSON)

6 PINS

6 PINS

RθJA

Junction-to-ambient thermal resistance

204.6

194.9

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

50.5

128.9

°C/W

RθJB

Junction-to-board thermal resistance

54.3

153.8

°C/W

ψJT

Junction-to-top characterization parameter

0.8

11.9

°C/W

ψJB

Junction-to-board characterization parameter

52.8

157.4

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

N/A

°C/W