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SH7672 Datasheet(PDF) 293 Page - Renesas Technology Corp |
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SH7672 Datasheet(HTML) 293 Page - Renesas Technology Corp |
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293 / 1292 page ![]() Section 7 Bus State Controller (BSC) Rev. 1.00 Nov. 14, 2007 Page 267 of 1262 REJ09B0437-0100 (11) Power-On Sequence In order to use SDRAM, mode setting must first be made for SDRAM after waiting for 100 µs or a longer period after powering on. This 100- µs or longer period should be obtained by a power-on reset generating circuit or software. To perform SDRAM initialization correctly, the bus state controller registers must first be set, followed by a write to the SDRAM mode register. In SDRAM mode register setting, the address signal value at that time is latched by a combination of the CSn, RAS, CAS, and RD/WR signals. If the value to be set is X, the bus state controller provides for value X to be written to the SDRAM mode register by performing a write to address H'FFFC5000 + X for area 3 SDRAM. In this operation the data is ignored, but the mode write is performed as a byte-size access. To set burst read/single write, CAS latency 2 to 3, wrap type = sequential, and burst length 1 supported by the LSI, arbitrary data is written in a byte-size access to the addresses shown in table 7.18. In this time 0 is output at the external address pins of A12 or later. Table 7.18 Access Address in SDRAM Mode Register Write • Setting for Area 3 Burst read/single write (burst length 1): Data Bus Width CAS Latency Access Address External Address Pin 16 bits 2 H'FFFC5440 H'0000440 3 H'FFFC5460 H'0000460 32 bits 2 H'FFFC5880 H'0000880 3 H'FFFC58C0 H'00008C0 Burst read/burst write (burst length 1): Data Bus Width CAS Latency Access Address External Address Pin 16 bits 2 H'FFFC5040 H'0000040 3 H'FFFC5060 H'0000060 32 bits 2 H'FFFC5080 H'0000080 3 H'FFFC50C0 H'00000C0 |
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