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SH7672 Datasheet(PDF) 295 Page - Renesas Technology Corp |
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SH7672 Datasheet(HTML) 295 Page - Renesas Technology Corp |
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295 / 1292 page ![]() Section 7 Bus State Controller (BSC) Rev. 1.00 Nov. 14, 2007 Page 269 of 1262 REJ09B0437-0100 (12) Low-Power SDRAM The low-power SDRAM can be accessed using the same protocol as the normal SDRAM. The differences between the low-power SDRAM and normal SDRAM are that partial refresh takes place that puts only a part of the SDRAM in the self-refresh state during the self-refresh function, and that power consumption is low during refresh under user conditions such as the operating temperature. The partial refresh is effective in systems in which there is data in a work area other than the specific area can be lost without severe repercussions. The low-power SDRAM supports the extension mode register (EMRS) in addition to the mode registers as the normal SDRAM. This LSI supports issuing of the EMRS command. The EMRS command is issued according to the conditions specified in table below. For example, if data H'0YYYYYYY is written to address H'FFFC5XX0 in longword, the commands are issued to the CS3 space in the following sequence: PALL -> REF × 8 -> MRS -> EMRS. In this case, the MRS and EMRS issue addresses are H'0000XX0 and H'YYYYYYY, respectively. If data H'1YYYYYYY is written to address H'FFFC5XX0 in longword, the commands are issued to the CS3 space in the following sequence: PALL -> MRS -> EMRS. Table 7.19 Output Addresses when EMRS Command Is Issued Command to be Issued Access Address Access Data Write Access Size MRS Command Issue Address EMRS Command Issue Address CS3 MRS H'FFFC5XX0 H'******** 16 bits H'0000XX0 CS3 MRS + EMRS (with refresh) H'FFFC5XX0 H'0YYYYYYY 32 bits H'0000XX0 H'YYYYYYY CS3 MRS + EMRS (without refresh) H'FFFC5XX0 H'1YYYYYYY 32 bits H'0000XX0 H'YYYYYYY |
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