7477 datasheet(202/354 Pages) RENESAS

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7470/7471/7477/7478 GROUP USER’S MANUAL

HARDWARE

1.19 Built-in PROM version

Reading

Output disable

Writing

Writing verify

Writing disable

_____

VIL

VIH

VIL

VIH

VPP

VCC

VPP

VCC

____________

RESET

D0 to D7

Output

Floating

Input

Output

Floating

Note: VIL denotes an “L” input voltage and VIH denotes an “H” input voltage.

_____

VIL

VIH

Mode

1.19.3 Writing, reading, and erasing to built-in PROM

_____________

The built-in PROM version is put into the EPROM mode by applying the “L” level to the RESET pin. Write,

read and erase operations to the built-in PROM in the EPROM mode are described below.

Table 1.19.6 shows input signals in each mode.

(1) Reading

_____________

Apply 0 V to the RESET pin and 5 V to the VCC pin.

_____

When an address signal (A0-A14) is input and the CE pin and the OE pin are caused to go “L”, the

contents of the PROM appear to data I/O pins (D0-D7).

_____

The data I/O pins (D0-D7) are put into a floating when either the CE pin or the OE pin is in the “H”

state.

(2) Writing

_____________

Apply 0 V to the RESET pin and 5 V to the VCC pin.

_____

When the OE pin is caused to go to “H” and VPP is applied to the VPP pin, the program mode is

provided.

q Set an address to the address input pins (A0-A14) and give write data to the data I/O pins (D0-D7)

in parallel.

_____

In the above condition, a write operation is performed by causing the CE pin to go to “L”.

When using a PROM programmer, specify an address into the following area.

q Address 600016 to address 7FFF16 (for the M3747xE4)

q Address 400016 to address 7FFF16 (for the M3747xE8)

(3) Erasing

q An erase operation is enabled only in the built-in EPROM version with window (M37471E8SS/

M37478E8SS).

q Data can be erased by irradiating ultraviolet rays having a wave length of 2537Å.

q The minimum amount of irradiation required for an erase operation is 15 W•s/cm2.

Table 1.19.6 Input/Output signal on each mode

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