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TMS320 Datasheet(PDF) 60 Page - Texas Instruments

Part # TMS320
Description  SECOND-GENERATION DIGITAL SIGNAL PROCESSORS
PDF  69 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
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TMS320 Datasheet(HTML) 60 Page - Texas Instruments

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TMS320E25
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77001
60
Table 5 shows the programming levels required for programming, verifying and reading the EPROM cell. The
paragraphs following the table describe the function of each programming level.
Table 5. TMS320E25 Programming Mode Levels
SIGNAL
NAME †
TMS320E25
PIN
TMS27C64
PIN
PROGRAM
PROGRAM
VERIFY
PROGRAM
INHIBIT
READ
OUTPUT
DISABLE
E
22
20
VIL
VIL
VIH
VIL
VIL
G
42
22
VIH
PULSE
X
PULSE
VIH
PGM
41
27
PULSE
VIH
X
VIH
VIH
VPP
25
1
VPP
VPP
VPP
VCC
VCC
VCC
61,35
28
VCC + 1
VCC + 1
VCC + 1
VCC
VCC
VSS
27,44,10
14
VSS
VSS
VSS
VSS
VSS
CLKIN
52
14
VSS
VSS
VSS
VSS
VSS
RS
65
14
VSS
VSS
VSS
VSS
VSS
EPT
24
26
VSS
VSS
VSS
VSS
VSS
Q1-Q8
18-11
11-13,15-19
DIN
QOUT
HI-Z
QOUT
HI-Z
A12-A10
40-38
2,23,21,
ADDR
ADDR
X
ADDR
X
A9-A7
37,36,34
24,25,3
ADDR
ADDR
X
ADDR
X
A6
33
4
ADDR
ADDR
X
ADDR
X
A5
32
5
ADDR
ADDR
X
ADDR
X
A4
31
3
ADDR
ADDR
X
ADDR
X
A3-A0
30-28,26
7-10
ADDR
ADDR
X
ADDR
X
† In accordance with TMS27C64.
LEGEND;
VIH = TTL high level; VIL = TTL low level; ADDR = byte address bit
VPP = 12.5 V ± 0.5 V; VCC = 5 ± 0.25 V; X = don’t care
PULSE = low-going TTL level pulse; DIN = byte to be programmed at ADDR
QOUT = byte stored at ADDR; RBIT = ROM protect bit.
erasure
Before programming, the device is erased by exposing the chip through the transparent lid to high-intensity
ultraviolet light (wavelength 2537 Å). The recommended minimum exposure dose (UV-intensity
×
exposure-time) is 15 W
•s/cm2. A typical 12 mW/cm2, filterless UV lamp will erase the device in 21 minutes. The
lamp should be located approximately 2.5 cm above the chip during erasure. After erasure, all bits are in the
high state. Note that normal ambient light contains the correct wavelength for erasure. Therefore, when using
the TMS320E25, the window should be covered with an opaque label.
fast programming
After erasure (all memory bits in the cell are logic one), logic zeroes are programmed into the desired locations.
The fast programming algorithm, shown in Figure 10, is normally used to program the entire EPROM contents,
although individual locations may be programmed separately. A programmed logic zero can be erased only by
ultraviolet light. Data is presented in parallel (eight bits) on pins Q8-Q1. Once addresses and data are stable,
PGM is pulsed. The programming mode is achieved when VPP = 12.5 V, PGM = VIL, VCC = 6 V, G = VIH, and
E = VIL More than one TMS320E25 can be programmed when the devices are connected in parallel. Locations
can be programmed in any order.
Programming uses two types of programming pulses: prime and final. The length of the prime pulse is 1 ms.
After each prime pulse, the byte being programmed is verified. If correct data is read, the final programming
pulse is applied; if correct data is not read, an additional 1-ms prime pulse is applied up to a maximum of 15
times. The final programming pulse is 4 ms times the number of prime programming pulses applied. This
sequence of programming and verification is performed at VCC = 6 V, and VPP = 12.5 V. When the full fast
programming routine is complete, all bits are verified with VCC = VPP = 5 V.



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