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AM3517 Datasheet(PDF) 63 Page - Texas Instruments |
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AM3517 Datasheet(HTML) 63 Page - Texas Instruments |
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63 / 184 page  3.3 DC Electrical Characteristics AM3517/05 ARM Microprocessor www.ti.com SPRS550 – OCTOBER 2009 Table 3-4 summarizes the dc electrical characteristics. Table 3-4. DC Electrical Characteristics(1) PARAMETER MIN NOM MAX UNIT LVCMOS Pin Buffers VIH High-level input voltage vddshv = 1.8 V 0.6 x vddshv vddshv + 0.3 V vddshv = 3.3 V 0.6 x vddshv vddshv + 0.3 VIL Low-level input voltage vddshv = 1.8 V TBD 0.3 x vddshv V vddshv = 3.3 V TBD 0.6 VOH High-level output voltage(2) vddshv = 1.8 V vddshv x 0.2 V vddshv = 3.3 V 0.75 x vddshv VOL Low-level output voltage(2) vddshv = 1.8 V 0.2 V vddshv = 3.3 V 0.125 x vddshv tT Input transition time (rise time, tR or fall time, tF evaluated 10 ns between 10% and 90% at PAD) II Input current with VI = VI max TBD TBD A IOZ Off-state output current for output in high impedance with driver TBD TBD A only, driver disabled Off-state output current for output in high impedance with TBD driver/receiver/pullup only, driver disabled, pullup not inhibited Off-state output current for output in high impedance with TBD driver/receiver/pulldown only, driver disabled, pulldown not inhibited IZ Total leakage current through the PAD connection of a TBD TBD A driver/receiver combination that may include a pullup or pulldown. The driver output is disabled and the pullup or pulldown is inhibited. LVCMOS Open-Drain Pin Buffers Dedicated to I2C IOs VIH High level input voltage TBD TBD V VIL Low level input voltage TBD 0.6 V VOL Low-level output voltage open-drain at 3-mA sink current TBD TBD V II Input current at each I/O pin with an input voltage between 0.1 x TBD TBD A vddshv to 0.9 x vddshv CI Capacitance for each I/O pin TBD pF TOF Output fall time from VIHmin to VILmax with a Fast mode TBD TBD ns bus capacitance CB from 10 pF to 400 pF Standard mode TBD Output fall time with a capacitive load from 10 High-speed mode TBD TBD pF to 100 pF at 3-mA sink current Output fall time with a capacitive load of 400 TBD TBD pF at 3-mA sink current Output fall time with a capacitive load of 40 TBD pF (for CBUS compatibility) Complex IO Dedicated to USB VIH High-level input voltage TBD TBD V VIL Low-level input voltage TBD 0.6 V VOH High-level output voltage at 4-mA sink current TBD V VOL Low-level output voltage at 4-mA sink current TBD V II Input current at each I/O pin with an input voltage between 0.1 x TBD TBD A vddshv to 0.9 x vddshv CI Capacitance for each I/O pin TBD pF (1) Values are subject to change after characterization. (2) With 100 A sink / source current at vddsxmin. Submit Documentation Feedback ELECTRICAL CHARACTERISTICS 63 |
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