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HCS12 Datasheet(PDF) 107 Page - Freescale Semiconductor, Inc |
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HCS12 Datasheet(HTML) 107 Page - Freescale Semiconductor, Inc |
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107 / 452 page ![]() S12CPUV2 Reference Manual, Rev. 4.0 Freescale Semiconductor 107 Operation: (A : B) + (M : M+1) ⇒ A : B Description: Adds the content of memory location M concatenated with the content of memory location M +1 to the content of double accumulator D and places the result in D. Accumulator A forms the high-order half of 16-bit double accumulator D; accumulator B forms the low-order half. ADDD Add Double Accumulator ADDD CCR Details: S X HIN Z V C –––– ∆∆∆∆ N: Set if MSB of result is set; cleared otherwise Z: Set if result is $0000; cleared otherwise V: D15 • M15 • R15 + D15 • M15 • R15 Set if two’s complement overflow resulted from the operation; cleared otherwise C: D15 • M15 + M15 • R15 + R15 • D15 Set if there was a carry from the MSB of the result; cleared otherwise Source Form Address Mode Object Code Access Detail HCS12 M68HC12 ADDD #opr16i ADDD opr8a ADDD opr16a ADDD oprx0_xysp ADDD oprx9,xysp ADDD oprx16,xysp ADDD [D,xysp] ADDD [oprx16,xysp] IMM DIR EXT IDX IDX1 IDX2 [D,IDX] [IDX2] C3 jj kk D3 dd F3 hh ll E3 xb E3 xb ff E3 xb ee ff E3 xb E3 xb ee ff PO RPf RPO RPf RPO fRPP fIfRPF fIPRPf OP RfP ROP RfP RPO fRPP fIfRfP fIPRfP |
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