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MAX8939EWVT Datasheet(PDF) 2 Page - Maxim Integrated Products |
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MAX8939EWVT Datasheet(HTML) 2 Page - Maxim Integrated Products |
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2 / 43 page ![]() 2 ______________________________________________________________________________________ System Power Management for Mobile Handset Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. BATT, OUT1, SAFE_OUT, and INVIB to AGND ....-0.3V to +6.0V CHG_IN, OUT2, LED1, and LED2 to AGND .........-0.3V to +30V LED3 and CHG_MON to AGND.... -0.3V to (VSAFE_OUT + 0.3V) COMP2, IRQ, RESET_IN, COMP1, SCL, SDA, CHG, PWR_ON_CMP, REF, LDO1, LDO2, LDO3, LDO4, and LDO1_EN to AGND.................... -0.3V to (VBATT + 0.3V) OUTVIB to AGND..................................-0.3V to (VINVIB + 0.3V) PGND1 and PGND2 to AGND .............................-0.3V to +0.3V LX1, LX2 Current (Note 1).............................................1.7ARMS Continuous Power Dissipation (TA = +70NC) WLP (derate 24.4mW/NC above +70NC)..........................1.9W Junction to Ambient Thermal Resistance (BJA) (Note 2)........................................................................41NC/W Operating Temperature...................................... -40NC to +85NC Junction Temperature .....................................................+150NC Storage Temperature Range............................ -65NC to +150NC Soldering Temperature (reflow) ......................................+260NC ELECTRICAL CHARACTERISTICS (VBATT = 3.7V, VCHG_IN = 5.0V, circuit of Figure 1, TA = -40NC to +85NC, unless otherwise noted. Typical values are at TA = +25NC.) ABSOLUTE MAXIMUM RATINGS Note 1: LX1 has internal clamp diodes to PGND1 and OUT1. LX2 has internal clamp diodes to PGND2 and OUT2. Applications that forward bias these diodes should take care not to exceed the IC package power dissipation limit. Note 2: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-lay- er board. For detailed information on package thermal considerations, refer to http://www.maxim-ic.com/thermal-tutorial. PARAMETER CONDITIONS MIN TYP MAX UNITS BATT BATT Operating Voltage 2.9 5.5 V BATT Shutdown Supply Current All outputs off, I2C disabled, VSCL = VSDA= VRESET_IN = 0V TA = +25NC 0.4 1 F A TA = +85NC 0.4 BATT Standby Supply Current All outputs off, VSCL = VSDA = VRESET_IN = 1.8V, I2C ready TA = +25NC 5 10 F A TA = +85NC 5 BATT Biasing Supply Current I2C ready, one or more outputs on 60 F A Undervoltage Lockout (UVLO) Threshold BATT rising 2.6 2.75 2.9 V Undervoltage Lockout Hysteresis 100 mV THERMAL SHUTDOWN Threshold +160 N C Hysteresis 20 N C REFERENCE Reference Output Voltage 1.200 V Reference Supply Rejection 0.2 mV LOGIC AND CONTROL INPUTS Input Low Level SDA, SCL, LDO1_EN, CHG, and RESET_IN 0.4 V Input High Level SDA, SCL, LDO1_EN, CHG, and RESET_IN 1.40 V Logic-Input Current SDA, SCL, LDO1_EN, CHG, and RESET_IN, 0 < VIN < 5.5V TA = +25NC -1 +1 F A TA = +85NC 0.1 |
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